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PBSM5240PF Medium Power Transistor


NXP drives miniaturization with ultra-compact power management solution for portable devices


NXP's PBSM5240PF Medium Power Transistor NXP Semiconductors presents the PBSM5240PF, an ultra-compact medium power transistor and N-channel Trench MOSFET housed in a leadless DFN2020-6 (SOT1118) plastic package. Measuring only 2 x 2 mm and with a height of just 0.65 mm, the DFN2020-6 (SOT1118) has been designed in response to the industry trend for miniaturization in high-performance consumer products such as mobile devices.

As one of the first power management solutions on the market to integrate a low VCE(sat) BISS transistor and Trench MOSFET into a 2-in-1 product, the PBSM5240PF saves space on the PCB, while delivering high electrical performance.

Compared to conventional solutions, which require two packages for the Breakthrough in Small Signal (BISS)/MOSFET solution, the PBSM5240PF offers a more than 50 percent reduction in footprint and more than 10 percent decrease in package height. Also, because the DFN2020-6 (SOT1118) package incorporates a heat sink, the device delivers 25 percent improved thermal performance, which leads to higher currents up to 2 A and less power consumption.

Features
  • Very low collector-emitter saturation voltage VCE(sat)
  • DFN2020-6 package in 2 x 2 mm requires less
    Printed-Circuit Board (PCB) area
  • High energy efficiency due to less heat generation
  • High collector current capability IC and ICM
  • High collector current gain (hFE) at high IC

Digi-Key P/N Manufacturer P/N Packaging Description  
568-7527-2-ND PBSM5240PF,115 Tape & Reel (TR) TRANS PNP N-CH SOT1118 Datasheet
568-7527-1-ND Cut Tape (CT)
568-7527-6-ND Digi-Reel®