SST12LP17E/18E RF Power Amplifiers



Microchip's 2.4 GHz high-efficiency RF power amplifiers based on the
highly-reliable InGaP/GaAs HBT technology

Microchip SST12LP17E/18E RF Power Amplifiers Microchip's SST12LP17E is a 2.4 GHz fully-integrated, high-efficiency power amplifier module based on the highly-reliable InGaP/GaAs HBT technology and designed in compliance with IEEE 802.11b/g/n applications. It typically provides 29 dB gain with 28% power-added efficiency. The SST12LP17E has excellent linearity while meeting 802.11g spectrum mask at 21.5 dBm. It also features easy board-level usage, along with high-speed power-up/-down control through a single combined reference voltage pin.

The SST12LP18E is a versatile power amplifier based on the highly-reliable InGaP/GaAs HBT technology. The SST12LP18E is a 2.4 GHz high-efficiency power amplifier designed in compliance with IEEE 802.11b/g/n applications. It typically provides 25 dB gain with 32% power-added efficiency. The SST12LP18E has excellent linearity while meeting 802.11g spectrum mask at 21.5 dBm. The SST12LP18E is ideal for embedded applications because it provides linear power even at low-battery voltages. With a reference voltage as low as 2.7 V, the SST12LP18E will operate from -20°C to +85°C.

  SST12LP17E Features and Applications   SST12LP18E Features and Applications
  • Input/output ports matched to 50 Ω internally and DC decoupled
  • High gain: Typically 29 dB gain across 2.4-2.5 GHz
  • High linear output power (at 3.3 V)
  • High power-added efficiency/Low operating current for both 802.11b/g/n applications
  • Low shut-down current (~2 μA)
  • Delivers excellent performance at low temperature down to 2.7 V bias voltage
  • Limited variation over temperature
  • Temperature and load insensitive on-chip power detector
    Applications
  • WLAN (IEEE 802.11b/g/n)
  • Home RF
  • Cordless phones
  • 2.4 GHz ISM wireless equipment
  • High gain: Typically 25 dB gain across 2.4-2.5 GHz
  • High linear output power (at 3.3 V)
  • High power-added efficiency/Low operating current for both 802.11b/g/n applications
  • Low shut-down current (~2 μA)
  • Low voltage operation down to 2.7 V bias
  • Limited variation over temperature
  • Temperature and load insensitive on-chip power detector, >15 dB dynamic range
    Applications
  • WLAN (IEEE 802.11b/g/n)
  • Home RF
  • Cordless phones
  • 2.4 GHz ISM wireless equipment

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Microchip
Part Number
Digi-Key
Part Number
Packaging Description Package  
SST12LP17E-QU8E SST12LP17E-QU8ETR-ND Tape & Reel RF Power Amplifier 2.4 GHz
802.11B/G/N
8-UDFN SST12LP17E Datasheet
SST12LP17E-QU8ECT-ND Cut Tape
SST12LP17E-QU8EDKR-ND Digi-Reel
SST12LP18E-QX8E SST12LP18E-QX8ETR-ND Tape & Reel RF Power Amplifier 2.4 GHz 8-XSON SST12LP18E Datasheet
SST12LP18E-QX8ECT-ND Cut Tape
SST12LP18E-QX8EDKR-ND Digi-Reel