IXYS Corporation Supplier Page

Q3 HiPerFETT Power MOSFET in
SMPD Package


The 1000 V/30 A Q3-class HiPerFET™ power MOSFET is available in the surface mount power device (SMPD) package


IXYS Corporation's Q3 HiPerFETT Power MOSFET in SMPD PackageThe 1000 V, 30 A Q3-Class HiPerFET™ Power MOSFET is now available in the IXYS Surface Mount Power Device (SMPD) package. The device can be easily surface mounted on a Printed Circuit Board (PCB) using a standard pick-and-place and reflow soldering process. No costly screws, cables, bus-bars, or hand soldered contacts are needed. Weighing only 8 g, it is much lighter (typically by 50%) than comparable conventional power modules, enabling a lower carbon footprint for end users. This is one of the key "green" initiatives of IXYS Corporation as it develops new products lighter in weight for the Cleantech industry.

Due to its new compact, high performance SMPD package, the MMIX1F44N100Q3 MOSFET exhibits a low package inductance and high current-handling capability. A ceramic isolation of 2500 V is achieved with the Direct Copper Bond (DCB) substrate technology – an electrically isolated tab is provided for heat sinking.

Features Applications
  • Low RDS(on) and gate charge (Qg)
  • Low intrinsic gate resistance
  • Fast intrinsic rectifier
  • Excellent dv/dt performance
  • High power density
  • High avalanche energy rating
  • DC-DC converters
  • Battery chargers
  • Switching and resonant power supplies
  • DC choppers
  • Temperature and lighting controls

Digi-Key P/N Manufacturer P/N Description
MMIX1F44N100Q3-ND MMIX1F44N100Q3 MOSFET N CH 1000V 30A Datasheet