Rugged RF Transistors

Freescale releases three new 50V RF LDMOS power transistors for industrial mismatch applications, and higher efficiency for long-range aerospace applications.

RF Transistors in industrial applications briefly encounter conditions in which nearly all of their generated power is reflected back to the amplifier destroying all but the most robust transistors. These new Freescale products deliver the full rated output power after withstanding a 65:1 VSWR. This enhanced ruggedness allows engineers to remove previously required external circuitry, representing significant system savings while improving performance.

MRFE6VP61K25H/HS 1250 Watts CW, 65:1 VSWR, 50V

Buy Now | Data Sheet | Application Notes

MRFE6VP61K25HMRFE6VP61K25HS
  • Typical Performance: VDD = 50 Volts, IDQ = 100 mA
Signal Type Pout
(W)
f
(MHz)
Gps
(dB)
ηD
(%)
IRL
(dB)
Pulsed (100 µsec, 20% Duty Cycle) 1250 Peak 230 24.0 74.0 -14
CW 1250 CW 230 22.9 74.6 -15
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  • Typical Performance: VDD = 50 Volts, IDQ = 100 mA
  • Capable of Handling a Load Mismatch of 65:1 VSWR, @ 50 Vdc, 230 MHz, at all Phase Angles, Designed for Enhanced Ruggedness, 1250 Watts Pulsed Peak Power, 20% Duty Cycle, 100 µsec
  • Capable of 1250 Watts CW Operation
  • Unmatched Input and Output Allowing Wide Frequency Range Utilization
  • Device can be used Single-Ended or in a Push-Pull Configuration
  • Qualified Up to a Maximum of 50 VDD Operation
  • Characterized from 30 V to 50 V for Extended Power Range
  • Suitable for Linear Application with Appropriate Biasing
  • Integrated ESD Protection with Greater Negative Gate-Source Voltage Range for Improved Class C Operation
  • Characterized with Series Equivalent Large-Signal Impedance Parameters
  • RoHS Compliant
  • In Tape and Reel. R6 Suffix = 150 Units per 56 mm, 13 inch Reel.

MRFE6VP5600H/HS 600 Watts CW, 65:1 VSWR, 50V

Buy Now | Data Sheet | Application Notes

MRFE6VP5600H_HRMRFE6VP5600HS_HR
  • Typical Performance: VDD = 50 Volts, IDQ = 100 mA
Signal Type Pout
(W)
f
(MHz)
Gps
(dB)
ηD
(%)
IRL
(dB)
Pulsed (100 µsec, 20% Duty Cycle) 600 Peak 230 25.0 74.6 –18
CW 600 Avg. 230 24.6 75.2 –17
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  • Capable of Handling a Load Mismatch of 65:1 VSWR, @ 50 Vdc, 230 MHz, at all Phase Angles, Designed for Enhanced Ruggedness
    • 600 Watts Pulsed Peak Power, 20% Duty Cycle, 100 µsec
  • Unmatched Input and Output Allowing Wide Frequency Range Utilization
  • Device can be used Single-Ended or in a Push-Pull Configuration
  • Qualified Up to a Maximum of 50 VDD Operation
  • Characterized from 30 V to 50 V for Extended Power Range
  • Suitable for Linear Application with Appropriate Biasing
  • Integrated ESD Protection with Greater Negative Gate-Source Voltage Range for Improved Class C Operation
  • Characterized with Series Equivalent Large-Signal Impedance Parameters
  • RoHS Compliant
  • In Tape and Reel. R6 Suffix = 150 Units, 56 mm Tape Width, 13 inch Reel.

MRFE6VP6300H/HS 300 Watts CW, 65:1 VSWR, 50V

Buy Now | Data Sheet | Application Notes

MRFE6VP6300H_HRMRFE6VP6300HS_HR
  • Typical Performance: VDD = 50 Volts, IDQ = 100 mA
Signal Type Pout
(W)
f
(MHz)
Gps
(dB)
ηD
(%)
IRL
(dB)
Pulsed (100 µsec, 20% Duty Cycle) 300 Peak 230 26.5 74.0 –16
CW 300 CW 130 25.0 80.0 –15
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  • Capable of Handling a Load Mismatch of 65:1 VSWR, @ 50 Vdc, 230 MHz, at all Phase Angles
    • 300 Watts CW Output Power
    • 300 Watts Pulsed Peak Power, 20% Duty Cycle, 100 µsec
  • Device can be used Single-Ended or Push-Pull Configuration
  • Characterized with Series Equivalent Large-Signal Impedance Parameters
  • Qualified Up to a Maximum of 50 VDD Operation
  • Integrated ESD Protection with Greater Negative Gate-Source Voltage Range for Improved Class C Operation
  • RoHS Compliant
  • NI-780-4 in Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
  • NI-780S-4 in Tape and Reel. R3 Suffix = 250 Units per 32 mm, 13 inch Reel.

MRFE6VP8600H/HS 470-860 MHz, 600 W, 50 V LDMOS

Buy Now | Data Sheet | Application Notes

MRFE6VP6300H_HRMRFE6VP6300HS_HR
  • Typical Narrowband Performance: VDD = 50 Volts, IDQ = 1400 mA, Channel Bandwidth = 8 MHz, Input Signal PAR = 9.5 dB @ 0.01% Probability on CCDF. ACPR measured in 7.61 MHz Signal Bandwidth @ ±4 MHz Offset with an Integration Bandwidth of 4 kHz.
Signal Type Pout
(W)
f
(MHz)
Gps
(dB)
ηD
(%)
ACPR
(dBc)
IRL
(dB)
DVB-T (8k OFDM) 125 Avg. 860 19.3 30.0 –65.5 –12
  • Typical Pulsed Broadband Performance: VDD = 50 Volts, IDQ = 1400 mA, Pulsed Width = 100 µsec, Duty Cycle = 10%
Signal Type Pout
(W)
f
(MHz)
Gps
(dB)
ηD
(%)
Pulsed 600 Peak 470 19.3 47.1
650 20.0 53.1
860 18.8 48.9
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  • Capable of Handling >65:1 VSWR through all Phase Angles @ 50 Vdc, 860 MHz, DVB-T (8k OFDM) 240 Watts Avg. Output Power (3 dB Input Overdrive from Rated Pout)
  • Exceptional Efficiency for Class AB Analog or Digital Television Operation
  • Full Performance across Complete UHF TV Spectrum, 470-860 MHz
  • Capable of 600 Watt CW Output Power with Adequate Thermal Management
  • Integrated Input Matching
  • Extended Negative Gate-Source Voltage Range of -6.0 V to +10 V
    • Improves Class C Performance, e.g. in a Doherty Peaking Stage
    • Enables Fast, Easy and Complete Shutdown of the Amplifier
  • Characterized from 20 V to 50 V for Extended Operating Range for use with Drain Modulation
  • Excellent Thermal Characteristics
  • RoHS Compliant
  • In Tape and Reel. R6 Suffix = 150 Units, 56 mm Tape Width, 13 inch Reel.

NOTE: PARTS ARE PUSH–PULL

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