Fairchild Semiconductor Distributor

FDFMA3P029Z PowerTrench® MOSFET

30 V integrated P-channel PowerTrench® MOSFET from Fairchild

Fairchild Semiconductor's FDFMA3P029Z PowerTrench® MOSFETFairchild Semiconductor presents a 30 V integrated P-channel PowerTrench® MOSFET and Schottky diode. This device is designed specifically as a single package solution for the battery charge switch in cellular handset and other ultra-portable applications. It features a MOSFET with very low on-state resistance and an independently connected low forward voltage Schottky diode allows for minimum conduction losses. The MicroFET 2 X 2 mm package offers exceptional thermal performance for its physical size and is well suited to linear mode applications.

  • VF < 0.37 V @ 500 mA
  • Low profile - 0.8 mm maximum - in the new package MicroFET 2x2 mm
  • RoHS compliant
  • Max rDS(on) = 87 mΩ at VGS = –10 V, ID = –3.3 A
  • Max rDS(on) = 152 mΩ at VGS = –4.5 V, ID = –2.3 A
  • HBM ESD protection level > 2 KV typical

Digi-Key P/N Manufacturer P/N Packaging Description  
FDFMA3P029ZTR-ND FDFMA3P029Z Tape & Reel MOSFET P CH 30V 3.3A MICRO 2X2 Datasheet
FDFMA3P029ZDKR-ND Digi-Reel®