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EPC9006 Development Board |
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Simplify the evaluation process of EPC’s 100 V eGaN FET with EPC's dev board |
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| Efficient Power Conversion's EPC9006 development board is a 100 V maximum device input, 5 A maximum output current, half bridge with onboard gate drives, featuring the EPC2007 enhancement mode gallium nitride (eGaN) power transistor. The purpose of this development board is to simplify the evaluation process of EPC’s 100 V eGaN FET by including all the critical components on a single board that can be easily connected into any existing converter. Datasheet |
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| Features | |
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| Digi-Key P/N | Manufacturer P/N | Packaging | Description |
| 917-1023-ND | EPC9006 | - | BOARD DEV FOR EPC2007 100V EGAN |
| 917-1015-2-ND | EPC2007 | Tape & Reel | TRANS 100V 30MO BUMPED DIE |
| 917-1015-1-ND | Cut Tape |

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