EPC Distributor

EPC2018 150 V eGaN® FET


Efficient Power Conversion offers the high performance EPC2018 150 V eGaN® FET


EPC - EPC2018EPC’s EPC2018 gallium nitride power transistor delivers high-frequency switching for exceptional performance in DC-DC power conversion and class D audio applications.

The EPC2018 is a 5.76 mm², 150 VDS, 12 A device with a maximum RDS(on) of 25 milliohms with 5 V applied to the gate. This GaN power transistor delivers high performance due to its ultra-high switching frequency, extremely-low RDS(on), exceptionally-low QG, and in a very small package.

Applications that benefit from eGaN FET performance include high-speed DC-DC power supplies, point-of-load converters, class D audio amplifiers, wireless power transfer, RF envelope tracking, and hard-switched and high-frequency circuits.

Features Applications
  • Ultra-high efficiency
  • Ultra-small footprint
  • Ultra-low RDS(on)
  • Ultra-low QG
  • High-frequency DC-DC conversion
  • Class D audio
  • Ocean surface mapping and sonar systems
  • LiDAR aerial mapping

Digi-Key P/N Manufacturer P/N Description  
917-1034-2-ND EPC2018 TRANS GAN 150V 12A BUMPED DIE Datasheet
917-1034-1-ND
917-1034-6-ND