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Super Barrier Rectifiers

Diodes, Inc. and Digi-Key introduce MOSFET structured SBR technology

Super Barrier Rectifiers SBR® technology from Diodes, Inc. utilizes a MOSFET like structure to achieve low forward voltage loss, reduced high temperature reverse leakage, and fast switching without the required control of the gate voltage. The SBR diode removes the complexity of the gate voltage circuit by making a short contact between the gate and source of the channel diode. To ensure that a weakly inverted channel still exists under the gate, the oxide thickness is reduced to an optimized level. By utilizing a CMOS ion implantation process, SBR's can be easily tuned to the appropriate VF/IR trade-off without having to select a different metal type like the Schottky diode. This allows for further flexibility and scalability of the die to meet new market demands.

Higher efficiency and higher temperature operation
  • SBR enables lower VF with more stable reverse leakage current allowing applications to run more efficiently at higher ambient temperatures, resulting in more power savings and higher reliability.
Better performance in smaller packages
  • SBR patented high density cellular technology enables SBR to exceed the customer's ever increasing demand for high performance in smaller packages.
Scalable technology
  • Lack of metal Schottky barrier and use of CMOS process allows for a scalable technology from 0.1A to 60A and 20V to 300V without degradation of performance.

Computing & peripherals
  • 80+ PC power supplies
  • Printers
  • AC/DC power supplies
  • Gateway/router
  • Modems
Consumer electronics
  • LCD TV power supplies
  • Cell phone/MP3 players
  • DVD players
  • Welding
  • DC-DC conversion
  • Telecom power supplies

Product Training Module (PTM): Super Barrier Rectifier (SBR®) Product Training Module (PTM):
Super Barrier Rectifier (SBR®)