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NESG7030M04 Transistor

Silicon germanium carbon RF NPN transistor for use as a low-noise amplifier transistor

CEL's NESG7030M04 is a Silicon Germanium Carbon RF NPN Transistor for use as a low-noise amplifier transistor for wireless LAN systems, satellite radios, and similar applications. The device uses a process that adopts newly-developed silicon-germanium: carbon (SiGe:C) materials and achieves industry-leading low-noise performance. The new NESG7030M04 amplifies a weak microwave signal received wirelessly to an appropriate level and achieves a noise figure of 0.75 decibel (dB), which is the industry's top level for the 5.8 gigahertz (GHz) band used by wireless LANs and other applications. Since it amplifies with such low noise, it means that it can increase communication sensitivity in end products and can reduce signal transmission errors. CEL's NESG7030M04 Transistor

Features
  • The device is an ideal choice for low noise, high gain amplification.
    • Noise Figure: 0.75 dB TYP. at VCE = 2 V, IC = 5 mA, f = 5.8 GHz
    • Associated Gain: 14 dB TYP. at VCE = 2 V, IC = 5 mA, f = 5.8 GHz
  • PO (1 dB) = 4.5 dBm TYP. at VCE = 2 V, IC (set) = 10 mA, f = 2 GHz
  • Maximum stable power gain: MSG =16.5 dB TYP. at VCE = 2 V, IC = 15 mA, f = 5.8 GHz
  • SiGe: C HBT technology
  • Flat-lead 4-pin thin-type super minimold (M04 PKG)

Digi-Key P/N Manufacturer P/N Description
NESG7030M04-A-ND NESG7030M04-A DISCRETE RF DIODE Datasheet