DataFlash® E Series
Adesto Technologies' DataFlash E series offers lower power requirements and smart features for higher system efficiency and lower system costs
|Adesto Technologies' DataFlash "E" series is a new family of non-volatile memory devices with lower power requirements and smart features for higher system efficiency and lower system costs. The DataFlash E series offers a range of features and options including industry-first capabilities such as wide Vcc voltage and an "ultra-deep power down" mode. The E series products also include new "smart" features to improve system performance such as efficient "byte-write" that does not require large block erase and an industry-standard "erase-program-suspend-resume" command.
Byte-write: True Serail E2PROM functionality in a Serial Flash Device
With Adesto's E series devices, programmers issue a single software command to erase/write a single byte. This differs from standard Serial Flash products which require a 4 Kb block erase. That means less memory management is required from the host controller, freeing it for higher priority operations. Less memory management also means a smaller software footprint in the controller’s SRAM, providing the designer the flexibility to use a smaller microcontroller, or forego external SRAM.
Ultra-deep Power Down:
The E series offers maximum energy savings, via a simple software instruction for ultra-deep power-down. The power-down mode offered by the E series is measured in nano-amps, an order of magnitude better than other competitive products. Software control of power-down allows the designer to eliminate extra hardware components such as low-dropout (LDO) voltage regulators or transistors.
Extended Vcc Operation:
For mobile or battery-operated devices, the DataFlash E series products can run unregulated to maximize battery life from 1.65 V to 3.6 V uninterrupted. In a comparison of standard Vcc parts, the extended voltage range can maximize the battery life by as much as 1,000 percent while eliminating the cost of low-dropout (LDO) voltage regulators.
Low Power Read:
For applications running from smaller, slower MCU/CPUs and not operating in high MHz ranges, DataFlash now supports a Low-Power Read Command that can boost energy savings by typically 20%+ at clock frequencies under 10 MHz compared to standard Read Command options.
The E series family includes a variety of densities ideally suited for a digital voice, image, program code, data storage, and other memory applications.
|Digi-Key P/N||Manufacturer P/N||Description|
|AT45DB021E-SSHNHA-TCT-ND||AT45DB021E-SSHNHA-T||IC DATAFLASH 2MBIT 70MHZ 8SOIC|
|AT45DB021E-SHNHC-TCT-ND||AT45DB021E-SHNHC-T||IC DATAFLASH 2MBIT 70MHZ 8SOIC|
|AT45DB021E-SHNHA-TCT-ND||AT45DB021E-SHNHA-T||IC DATAFLASH 2MBIT 70MHZ 8SOIC|
|AT45DB021E-SHN-TCT-ND||AT45DB021E-SHN-T||IC DATAFLASH 2MBIT 70MHZ 8SOIC|
|View all AT45DB021E DataFlash devices|
|AT45DB041E-SSHN2B-TCT-ND||AT45DB041E-SSHN2B-T||IC DATAFLASH 4MBIT 85MHZ 8SOIC|
|AT45DB041E-SSHN-TCT-ND||AT45DB041E-SSHN-T||IC DATAFLASH 4MBIT 85MHZ 8SOIC|
|AT45DB041E-SHN-TCT-ND||AT45DB041E-SHN-T||IC DATAFLASH 4MBIT 85MHZ 8SOIC|
|AT45DB041E-SHN2B-TCT-ND||AT45DB041E-SHN2B-T||IC DATAFLASH 4MBIT 85MHZ 8SOIC|
|View all AT45DB041E DataFlash devices|
|1265-1085-1-ND||AT45DB081E-SSHN-T||IC FLASH 8MBIT 85MHZ 8SOIC|
|1265-1086-1-ND||AT45DB081E-SSHN2B-T||IC FLASH 8MBIT 85MHZ 8SOIC|
|1265-1087-1-ND||AT45DB081E-SHN-T||IC FLASH 8MBIT 85MHZ 8SOIC|
|1265-1089-1-ND||AT45DB081E-SHNHA-T||IC FLASH 8MBIT 85MHZ 8SOIC|
|View all AT45DB081E DataFlash devices|
|1265-1035-1-ND||AT45DB161E-SHD-T||IC FLASH 16MBIT 85MHZ 8SOIC|
|1265-1034-1-ND||AT45DB161E-SSHD-T||IC FLASH 16MBIT 85MHZ 8SOIC|
|1265-1041-1-ND||AT45DB161E-SSHF2B-T||IC FLASH 16MBIT 85MHZ 8SOIC|
|1265-1046-ND||AT45DB161E-MHF-Y||IC FLASH 16MBIT 85MHZ 8UDFN|
|View all AT45DB161E DataFlash devices|
|1265-1098-1-ND||AT45DB321E-SHF2B-T||IC DATAFLASH 32MB 85MHZ 8SOIC|
|1265-1095-1-ND||AT45DB321E-MHF-T||IC DATAFLASH 32MB 85MHZ 8UDFN|
|View all AT45DB321E DataFlash devices|
|View all AT45DB641E DataFlash devices|