NextPowerS3 MOSFETs


NXP expands their NextPowerS3 MOSFETs: Integrated Schottky performance with low leakage current

NXP expands their 30 V NextPowerS3 MOSFETs with high-performance and unique “SchottkyPlus” technology. It is the first MOSFET to deliver the high frequency, low spiking performance typically associated with MOSFETs with an integrated Schottky or Schottky-like diode, and without problematic high leakage current. The NextPowerS3 MOSFETs can be used for a variety of applications, including high-efficiency power supplies for telecoms and cloud computing, high-performance portable computing, and battery-powered motor control, such as rechargeable power tools.

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Features and Benefits
  • High system efficiency through ultra-low Q G, QGD and QOSS
  • Reduced switch-node voltage spikes; EMI friendly
  • Unique SchottkyPlus technology; integrated Schottky performance without high leakage current
  • No wire bonds, or glue; qualified to 175 °C
Applications
  • On-board DC-to-DC solutions for server and telecommunications
  • Secondary-side synchronous rectification in telecommunication applications
  • Voltage regulator modules (VRM)
  • Point-of-Load (POL) modules
  • Power delivery for V-core, ASIC, DDR, GPU, VGA and system components
  • Brushed and brushless motor control

NextPowerS3

Manufacturer Part Number Description Available Quantity Datasheets
PSMN4R0-30YLDX MOSFET N-CH 30V 95A LFPAK 5942
PSMN2R4-30MLDX MOSFET N-CH 30V 70A LFPAK33 98
PSMN2R4-30YLDX MOSFET N-CH 30V 100A LFPAK 302
PSMN4R2-30MLDX MOSFET N-CH 30V 70A LFPAK33 1500
PSMN7R5-30MLDX MOSFET N-CH 30V 57A LFPAK33 490
PSMN7R5-30YLDX MOSFET N-CH 30V 51A LFPAK 940
PSMN3R0-30YLDX MOSFET N-CH 30V 100A LFPAK 211
PSMN6R0-30YLDX MOSFET N-CH 30V 7A LFPAK 358
PSMN1R0-40YLDX MOSFET N-CH 40V 100A LFPAK 0
PSMN1R4-40YLDX MOSFET N-CH 40V 100A LFPAK 370
PSMN0R9-30YLDX MOSFET N-CH 30V 100A 56LFPAK 500
PSMN1R0-30YLDX MOSFET N-CH 30V 100A LFPAK 470
PSMN1R2-30YLDX MOSFET N-CH 30V 100A LFPAK 190
PSMN1R4-30YLDX MOSFET N-CH 30V 100A LFPAK 500