High-Power Infrared Emitting Diode


Vishay offers the high-power infrared emitting diode, 850 nm, surface-emitter technology

Vishay has broadened its optoelectronics portfolio with the release of a new 850 nm infrared (IR) emitter in a compact 3.85 mm by 3.85 mm by 2.24 mm top-view SMD package. Based on SurfLight™ surface-emitter-chip technology and featuring an integrated lens, the VSMY98545 offers high-drive-current capability, high radiant intensity, and high optical power while providing low thermal resistivity.

The VSMY98545 features a 42 mil by 42 mil emitter chip, which supports a low thermal resistance of 10 K/W junction-to-pin, and enables high drive currents up to 1 A and pulses up to 5 A. The emitter's integrated lens supports a +/- 45 degree angle of half intensity, resulting in ultra-high radiant intensity of 350 mW/sr at 1 A and 1600 mW/sr at 5 A (pulses). This is more than double the radiant intensity of devices without lenses.

With its extremely-high drive-current capabilities and optical power to 660 mW at 1 A, the VSMY98545 can replace multiple standard SMD devices, allowing designers to reduce the component count and improve performance in a wide variety of applications. The emitter is optimized for IR illumination in CCTV, gaming, and road-cash systems, in addition to long-range proximity applications such as presence detection for wake-up functions in office equipment.

The device offers fast switching speeds down to 15 ns, low forward voltages down to 1.8 V at 1 A, and operating temperatures from -40°C to +95°C. The VSMY98545 ensures a shelf life of 168 hours and provides a moisture sensitivity level (MSL) of 3 in accordance with J-STD-020. Supporting lead (Pb)-free reflow soldering, the device is RoHS-compliant, halogen-free, and Vishay Green.


Features and Benefits
  • Package type: surface mount
  • Package form: high power SMD with lens
  • Dimensions (L x W x H in mm): 3.85 x 3.85 x 2.24
  • Peak wavelength: ⌊ p = 850 nm high reliability
  • High radiant power
  • High radiant intensity
  • Angle of half intensity: ∏ = } 45°
  • Low forward voltage
  • Designed for high drive currents: up to 1 A (DC) and up to 5 A pulses
  • Low thermal resistance: RthJP = 10 K/W
  • Floor life: 168 h, MSL 3, acc. J-STD-020
  • Lead (Pb)-free reflow soldering
Applications
  • Infrared illumination for CMOS cameras (CCTV)
  • Illumination for cameras (3D gaming)
  • Machine vision
  • 3D TV

High Power Infrared Emitting Diode

Manufacturer Part Number Description Available Quantity Datasheets
VSMY98545 IR EMITTING DIODE 850NM SMD 881