GigaMOS™ TrenchT2™ Power MOSFETs


IXYS power MOSFET solutions for low voltage, high current power conversion systems

IXYS has expanded its GigaMOS product family with the GigaMOS TrenchT2 Standard and HiPerFET™ Power MOSFETs. These devices are offered with drain-to-source voltage ratings from 40 V to 170 V and provide high current capabilities of up to 600 A (Tc @ 25°C). The combined high current ratings of these MOSFETs and available compact package options provide designers with the ability to control more power within a smaller footprint. These devices also promote device consolidation through the reduction or elimination of multiple paralleled lower current rated MOSFET devices in high power switching applications. This results in a reduction in part count as well as the number of required drive components, thus improving overall system simplicity, reliability, and cost.

Features
  • High current capability (up to 600 A)
  • Low Rds(on) and gate charge (Qg)
  • Incorporates IXYS HiPerFET technology for fast power switching performance
  • Avalanche capabilities

GigaMOS™ TrenchT2™

Manufacturer Part Number Description Available Quantity Datasheets
IXFK240N15T2 MOSFET N-CH 150V 240A TO264 115
IXFK320N17T2 MOSFET N-CH 170V 320A TO264 35
IXFK360N15T2 MOSFET N-CH 150V 360A TO264 276
IXFN320N17T2 MOSFET N-CH 170V 260A SOT227 228
IXFN360N15T2 MOSFET N-CH 150V 310A SOT227 207
IXFN520N075T2 MOSFET N-CH 75V 480A SOT227 1937
IXFX320N17T2 MOSFET N-CH 170V 320A PLUS247 0
IXFX360N15T2 MOSFET N-CH 150V 360A PLUS247 131