GigaMOS™ Power MOSFETs


IXYS Corporation's GigaMOS Power MOSFETs for high-power switching applications

IXYS Corporation's family of 170 V to 300 V GigaMOS Power MOSFETs offer high current capabilities of up to 260 amperes. Available in compact housing packages, these power MOSFETs give design engineers the capability to control more power within a smaller footprint. They also provide designers with the ability to reduce or eliminate multiple paralleled lower current rated MOSFET devices in high power switching applications. The resulting effect is a reduction in part count as well as the number of required drive components, improving over-all system reliability and cost. These power MOSFETs are optimized for superior switching performance in a broad range of high power switching applications.

Features
  • High current capability (up to 260 A)
  • Low Rds(on) and gate charge (Qg)
  • Incorporates IXYS HiPerFET™ technology for fast power switching performance
  • Avalanche capabilities
  • Eliminates multiple paralleled lower current rated MOSFETs devices
  • Improves overall system reliability and cost
  • Capability to switch more power within a smaller footprint
Applications
  • High-speed power switching applications
  • DC to DC converters
  • Battery chargers
  • Switch/resonant mode power supplies
  • DC choppers
  • AC motor drives
  • Uninterruptible power supplies

GigaMOS™ Power MOSFETs

Manufacturer Part Number Description Available Quantity Datasheets
IXFK160N30T MOSFET N-CH 300V 160A TO-264 314
IXFK170N20T MOSFET N-CH 200V 170A TO-264 128
IXFK180N25T MOSFET N-CH 250V 180A TO-264 523
IXFK230N20T MOSFET N-CH 200V 230A TO-264 740
IXFN180N25T MOSFET N-CH 250V 168A SOT-227 79
IXFN230N20T MOSFET N-CH 200V 220A SOT-227 903
IXFX120N30T MOSFET N-CH 300V 120A PLUS247 108
IXFX160N30T MOSFET N-CH 300V 160A PLUS247 299
IXFX180N25T MOSFET N-CH 250V 180A PLUS247 354
IXFX230N20T MOSFET N-CH 200V 230A PLUS247 449