GigaMOS™ Power MOSFETs


IXYS Corporation's GigaMOS Power MOSFETs for high-power switching applications

IXYS Corporation's family of 170 V to 300 V GigaMOS Power MOSFETs offer high current capabilities of up to 260 amperes. Available in compact housing packages, these power MOSFETs give design engineers the capability to control more power within a smaller footprint. They also provide designers with the ability to reduce or eliminate multiple paralleled lower current rated MOSFET devices in high power switching applications. The resulting effect is a reduction in part count as well as the number of required drive components, improving over-all system reliability and cost. These power MOSFETs are optimized for superior switching performance in a broad range of high power switching applications.

Features
  • High current capability (up to 260 A)
  • Low Rds(on) and gate charge (Qg)
  • Incorporates IXYS HiPerFET™ technology for fast power switching performance
  • Avalanche capabilities
  • Eliminates multiple paralleled lower current rated MOSFETs devices
  • Improves overall system reliability and cost
  • Capability to switch more power within a smaller footprint
Applications
  • High-speed power switching applications
  • DC to DC converters
  • Battery chargers
  • Switch/resonant mode power supplies
  • DC choppers
  • AC motor drives
  • Uninterruptible power supplies

GigaMOS™ Power MOSFETs

Manufacturer Part Number Description Available Quantity Datasheets
IXFK160N30T MOSFET N-CH 160A 300V TO-264 471
IXFK170N20T MOSFET N-CH 170A 200V TO-264 87
IXFK180N25T MOSFET N-CH 180A 250V TO-264 262
IXFK230N20T MOSFET N-CH 230A 200V TO-264 407
IXFN180N25T MOSFET N-CH 155A 250V SOT-227 106
IXFN230N20T MOSFET N-CH 230A 200V SOT-227 962
IXFX120N30T MOSFET N-CH 120A 300V PLUS247 129
IXFX160N30T MOSFET N-CH 160A 300V PLUS247 0
IXFX180N25T MOSFET N-CH 180A 250V PLUS247 139
IXFX230N20T MOSFET N-CH 230A 200V PLUS247 551