IXYS Corporation's GigaMOS Power MOSFETs for high-power switching applications
IXYS Corporation's family of 170 V to 300 V GigaMOS Power MOSFETs offer high current capabilities of up to 260 amperes. Available in compact housing packages, these power MOSFETs give design engineers the capability to control more power within a smaller footprint. They also provide designers with the ability to reduce or eliminate multiple paralleled lower current rated MOSFET devices in high power switching applications. The resulting effect is a reduction in part count as well as the number of required drive components, improving over-all system reliability and cost. These power MOSFETs are optimized for superior switching performance in a broad range of high power switching applications.