Full-SiC Half-Bridge Power Modules


ROHM's SiC power modules integrate SiC MOSFETs and SBDs in an industrial standard package

ROHM Semiconductor's full-SiC half-bridge power modules integrate SiC MOSFETs and SBDs in a standard industrial package. An original electric field mitigation structure, along with a novel screening method, are utilized to maintain reliability and enable the development of the first mass production system for full-SiC power modules.

Features

  • Low-stray inductance
  • High-speed recovery characteristics
  • Low-switching losses
  • No derating necessary compared to IGBT

Applications

  • Renewable energy/energy storage
  • EV/HEV inverter and chargers
  • Induction heating/welding
  • HVDC

Full-SiC Half-Bridge Power Modules

Manufacturer Part Number Description Available Quantity Datasheets
BSM120D12P2C005 MOSFET 2N-CH 1200V 120A MODULE 11
BSM180D12P2C101 MOSFET 2N-CH 1200V 180A MODULE 12