ESD Protection Diode


Toshiba's ESD protection diodes offer a small-package with both ultra-low capacitance and dynamic resistance

Toshiba's DF4D7M2G, DF6D7M1N, and DF10G7M1N are small-package array solutions which protect multiple bits of data at one time, taking up as little as 0.3 mm² of mounting space for each bit of protection. These arrays offer better protection density compared to having multiple 1-bit protection in the 0402 package. DF2B7M3SC is an incredibly-low capacitance device for protecting the most sensitive signal line (such as antennas and >10 GBps lanes). Despite the tiny form-factor and low-capacitance, these ESD protection diodes can handle up to ±8 kV(contact), ±15 kV(Air) of ESD surge based on the IEC61000 4-2 tests, and have low-dynamic resistance of under 1.4 Ω to ensure that your system is well protected.

Features Applications
  • Saves board space by the use of 0.79 x 0.79 mm tiny BGA and DFN packages
  • Low-capacitance diode array process for high-speed data line protection
  • Electrostatic discharge immunity test ratings based on IEC61000-4-2
  • Reduces clamp voltage and ESD strike’s impact on protected circuit
  • Mobile phones
  • Tablet PCs
  • Portable audio players
  • DSC and DVC


Product
Name
No. of bits ct
(typ)
VRWM
(Max)
VBR
(Min)
Clamp voltage
(typ)
RDYN Package Dimensions
DF2B7M3SC 1-bit 0.1 pF 5.0 V 6.0 V 13.5 V 1.4 Ω SC2 0.62 * 0.32* 0.3z mm
DF4D7M2G 2-bits 0.2 pF 5.0 V 6.0 V 13 V 0.8 Ω WCSP4 0.79 * 0.79 * 0.5z mm
DF6D7M1N 2-bits 0.3 pF 5.0 V 6.0 V 12 V 0.9 Ω DFN6 1.0 * 1.25 * 0.5z mm
DF10G7M1N 4-bits 0.3 pF 5.0 V 6.0 V 13 V 0.8 Ω DFN10 1.0 * 2.5 * 0.5z mm


ESD Protection

ESD Protection Diode

Manufacturer Part Number Description Available Quantity Datasheets
DF10G7M1N,LF TVS DIODE 5VWM 12VC 10DFN 8895
DF6D7M1N,LF TVS DIODE 5VWM 12VC 6DFN 5900