C2M Family of Silicon Carbide Power MOSFETs

Cree's C2M SiC MOSFETs with extremely-fast switching speeds and ultra-low switching losses

Cree has released the C2M family of Silicon Carbide (SiC) Power MOSFETs providing engineers with a wide range of competitively priced 1200 V and 1700 V SiC MOSFETs for a wide range of applications. Cree SiC MOSFETs enable engineers to lower overall-system cost by developing high-voltage circuits with extremely-fast switching speeds and ultra-low switching losses. Used in conjunction with Cree's Z-Rec® SiC Schottky diodes in an all-SiC system, the Cree Z-FET SiC MOSFET allows design engineers to achieve levels of energy efficiency, size, and weight reduction that are not possible with available silicon power devices of comparable ratings.

The new C2M family of MOSFETs is based on our rugged and reliable Gen2 SiC technology platform providing the lowest switching losses in their class and significantly higher switching frequencies, all at lower cost. This revolutionary product also reduces the size of magnetics and filter components and significantly reduces cooling requirements.

The C2M family includes the C2M0025120D, delivering a remarkable 25 mOhms at 1200 V in an industry-standard TO-247 package capable of handling 250 A of IDS pulse. The positive temperature coefficient allows safe and easy paralleling of devices to achieve higher power systems. Cree offers several reference design boards and gate driver reference boards to help customers get started quickly. We solve many of the design challenges for you helping you get your solution to the market quickly.

What applications could benefit from SiC MOSFETs? Here are just a few examples;

Solar and UPS inverters, industrial ower supply, induction heating power supplies, industrial fans, motor drives, medical imaging power supplies, auxiliary power supplies and battery chargers.

Cree products are being used today in many solar applications driven mainly by the cost savings potential that is possible with SiC MOSFETs and diodes. New customers interested in the cost savings possibilities can use the Cree 50 kW boost converter reference design as an example of how to greatly reduce the size, weight, and cost of solar designs. The 1200 V 25 mOhm device can be used as a building block for flexible and modular designs that can grow based on system requirements.

Industrial power supply is one of the fastest growing market segments for Cree. The higher switching frequency and lower losses result in smaller magnetics and less heat generated. Engineers are taking advantage of C2M technology by designing very dense, cost effective power supplies which are more reliable than existing power supplies using IGBT switches.

Cree Silicon Carbide Discrete Evaluation Kit

Compare and evaluate the performance of Cree MOSFETs compared to IGBTs.

  • Quickly prototype Cree MOSFET and IGBT power converter topologies up to 25 kW
  • Learn how to optimize a Cree MOSFET solution for EMI, ringing and drive requirements
Kit includes two 1200 V 80 mΩ SiC MOSFETs, two 1200 V/20 A SiC Schottky diodes, and testing hardware.

    MOSFET Video
 Cree C2M™ SiC MOSFET Spice Model   Cree Silicon Carbide Reference Designs  See how a Cree MOSFET beats an IGBT
Cree C2M™ SiC MOSFET Spice Model Cree SiC Reference Designs See how a Cree MOSFET beats an IGBT

Second-Generation C2M1000170D Silicon Carbide MOSFET


Manufacturer Part Number Description Available Quantity Datasheets
C2M0025120D MOSFET N-CH 1200V 90A TO-247 933
C2M0040120D MOSFET N-CH 1200V 60A TO-247 747
C2M0080120D MOSFET N-CH 1200V 31.6A TO247 3078
C2M0160120D MOSFET N-CH 1200V 17.7A TO-247 3148
C2M0280120D MOSFET N-CH 1200V 10A TO-247-3 925
C2M1000170D MOSFET N-CH 1700V 4.9A TO247 1341

Eval Board

Manufacturer Part Number Description Available Quantity Datasheets