AOS Common-Drain MOSFETs
Alpha and Omega Semiconductors offers their dual MOSFETs AON6810, AON6812 and AOC4810
AON6810, AON6812 and AOC4810 use the AlphaMOS™ technology to accomplish very-low RDS(ON) along with 4 kV ESD protection to enhance battery pack safety. AON6810 and AON6812 use a bottom-exposed DFN 5 x 6 package for enhanced thermal capability. The AON6812 features a low 8 mΩ max total Rss resistance at 10 V drive. Rated with a 30 V breakdown voltage, it is capable of charging and discharging a laptop battery pack with the least amount of power loss and heat dissipation. The AON6810 provides an extra level of protection with an internal temperature-sense diode that provides first-hand thermal information to the battery-control IC. By utilizing the temperature-sense pins of AON6810, designers can accurately monitor the MOSFETs thermal condition in a real-time basis to prevent any abnormal overheating.
To meet the demand of ultra-thin battery packs, the AOC4810 takes advantage of AOS's innovative Miro-DFN package, which features an ultra-low profile of only 0.4 mm. Unlike the conventional CSP (chip-scale packaging), the Micro-DFN eliminates the risk of die chipping by encapsulating the silicon to provide full protection to the die as well as providing excellent moisture isolation. When board space is key concern, AOC4810 provides a great option to further enhance power density. With dimensions of only 3.2 mm x 2 mm, AOC4810 offers a maximum RSS level of 8.8 mΩ to minimize conduction loss and heat dissipation.
- Trench-power AlphaMOS (αMOS LV) technology
- Very-low RDS(ON) at 4.5 V VGS
- Low gate charge
- ESD protection
- RoHS and Halogen-free compliant
- Common drain
- Integrated temp-sense diode