EPC 9016 and 9017 Development Boards


EPC development boards optimized for high-current, low duty-cycle applications

EPC's development boards are in half-bridge configurations containing a single top-side device and two parallel bottom devices. These boards are recommended for high-current, lower-duty cycle applications such as point-of-load converters and non-isolated telecom infrastructure.

The EPC9016 development board is a 40 V maximum device voltage, 25 A maximum output current half bridge with onboard gate drives, featuring the EPC2015 enhancement-mode (eGaN) field effect transistor (FET).

The EPC9017 development board is a 100 V maximum device voltage, 20 A maximum output current half bridge with onboard gate drives, featuring the EPC2001 enhancement-mode (eGaN) field effect transistor (FET).


eGan® FET's Characteristics eGaN™ Basics Drivng eGaN™ Power Transistors
Features
  • Simplify the evaluation process
  • Connects easily into any existing converter design
  • Contains all critical components and layout for optimal switching performance
  • All connections to the development boards are non-critical and can tolerate stray inductance

Development Boards

Manufacturer Part Number Description Available Quantity Datasheets
EPC9017 BOARD DEV FOR EPC2001 100V EGAN 43
EPC9016 BOARD DEV FOR EPC2015 40V EGAN 58