900 V Polar HiPerFET™ Power MOSFETs


From IXYS, rugged and energy efficient MOSFET solutions for power conversion systems

IXYS has expanded its Polar HiPerFET MOSFET product portfolio with the 900 V HiPerFET Power MOSFETs. Available with drain current ratings from 10.5 A to 56 A, these 900 V devices compliment IXYS’ high-voltage Polar HiPerFET MOSFET product line (available from 500 V to 1200 V) and provide the end customer a broader selection of robust, energy-efficient, high-voltage MOSFET solutions. The 900 V devices combine advantages derived from IXYS’ Polar technology platform and HiPerFET process to provide improved power efficiency and reliability for today’s demanding high-voltage conversion systems that require bus voltage operation of up to 700 V.

Features
  • International standard packages
  • ISOPLUS high performance package options (2500 V electrical isolation)
  • Fast intrinsic diode
  • Avalanche rated
  • Low package inductance
  • Excellent ruggedness and dV/dt capability
  • High power density

900V Polar HiPerFET Power MOSFETs

Manufacturer Part Number Description Available Quantity Datasheets
IXFB52N90P MOSFET N-CH TO-264 17
IXFH18N90P MOSFET N-CH TO-247 54
IXFH24N90P MOSFET N-CH TO-247 87
IXFN56N90P MOSFET N-CH SOT-227B 500
IXFT24N90P MOSFET N-CH TO-268 86
IXFX40N90P MOSFET N-CH PLUS247 120