Vishay introduces a new dual N-channel TrenchFET® power MOSFET in the ultra-compact, thermally-enhanced PowerPAK® SC-70 package. Designed to save space and increase power efficiency in portable electronics, the Vishay Siliconix SiA936EDJ features the industry's lowest on-resistance for 20 V (12 V VGS and 8 V VGS) devices at 4.5 V and 2.5 V gate drives in the 2 mm by 2 mm footprint area. For ultra-portables, mobile computing devices, consumer electronics, and portable healthcare products, the SiA936EDJ combines extremely-low on-resistance with built-in ESD protection of 2000 V in one compact device. Its on-resistance at 2.5 V is 11.7% lower than the closest competing 8 V VGS device, while providing higher (G-S) guard band, and 15.1% lower than the closest competing device with a 12 V VGS. These low on-resistance values allow designers to achieve lower voltage drops in their circuits and promote more efficient use of power and longer battery run times. In addition, by integrating two MOSFETs into one compact package, the dual SiA936EDJ simplifies designs, lowers the overall component count, and saves critical PCB space.