-12 V, -20 V, and -30 V Gen III P-Channel MOSFETs

TrenchFET® MOSFETs in the ultra-compact PowerPAK® SC-70 package from Vishay Siliconix

Vishay has extended its offering of TrenchFET® Gen III P-channel power MOSFETs in the ultra-compact PowerPAK® SC-70 package. Designed to save space and increase power efficiency in portable electronics, the Vishay Siliconix MOSFETs offer the industry's-lowest on-resistance for -12 V, -20 V, and -30 V (12 V VGS and 20 V VGS) devices at -4.5 V and -10 V gate drives in the 2 x 2 mm footprint area.

For load and battery switches in power management, and control switches in synchronous buck converter applications, the -12 V SiA467EDJ offers an extremely-low on-resistance down to 13 milliohms (-4.5 V). The -20 V SiA437DJ features values down to 14.5 milliohms (-4.5 V), and the -30 V SiA449DJ and SiA483DJ provide low on-resistance to 20 milliohms (-10 V) and 21 milliohms (-10 V). In addition, the SiA437DJ and SiA467EDJ feature a high 30 A current rating for load-switch applications with large in-rush currents.

Features Applications
  • TrenchFET® Power MOSFET
  • Thermally-enhanced PowerPAK® SC-70 package
  • Small footprint area
  • Low on-resistance
  • 100% Rg and UIS tested
  • Smartphones
  • Tablet PC’s
  • Mobile computing devices
  • Hard-disk drives
  • Solid-state drives

-12 V, -20 V, and -30 V Gen III P-Channel MOSFETs

Manufacturer Part Number Description Available Quantity Datasheets
SIA437DJ-T1-GE3 MOSFET P-CH 20V 29.7A SC70-6 8605
SIA449DJ-T1-GE3 MOSFET P-CH 30V 12A SC70-6 5954
SIA467EDJ-T1-GE3 MOSFET P-CH 12V 31A SC70-6 5971
SIA483DJ-T1-GE3 MOSFET P-CH 30V 12A SC70-6 5965