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Product Overview
Digi-Key Part Number SIHG21N65EF-GE3-ND
Quantity Available 497
Can ship immediately

Manufacturer Part Number


Description MOSFET N-CH 650V 21A TO-247AC
Expanded Description N-Channel 650V 21A (Tc) 208W (Tc) Through Hole TO-247AC
Lead Free Status / RoHS Status Lead free / RoHS Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Manufacturer Standard Lead Time 14 Weeks
Documents & Media
Datasheets SIHG21N65EF
Video File MOSFET Technologies for Power Conversion
Online Catalog N-Channel MOSFET (Metal Oxide)
Product Attributes Select All

Vishay Siliconix

Series -
Packaging ? Tube ?
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650V
Current - Continuous Drain (Id) @ 25°C 21A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 106nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 2322pF @ 100V
Vgs (Max) ±30V
FET Feature -
Power Dissipation (Max) 208W (Tc)
Rds On (Max) @ Id, Vgs 180 mOhm @ 11A, 10V
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-247AC
Package / Case TO-247-3
Additional Resources
Standard Package ? 25
Other Names SiHG21N65EF-GE3

01:25:10 3/29/2017

Price & Procurement

All prices are in USD.
Price Break Unit Price Extended Price
1 5.37000 5.37
10 4.82300 48.23
25 4.55960 113.99
100 3.95170 395.17
250 3.74904 937.26
500 3.36400 1,682.00
1,000 2.83710 2,837.10

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