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Product Overview
Digi-Key Part Number SIHB21N65EF-GE3-ND
Quantity Available 1,000
Can ship immediately
Manufacturer

Manufacturer Part Number

SIHB21N65EF-GE3

Description MOSFET N-CH 650V 21A D2PAK
Expanded Description N-Channel 650V 21A (Tc) 208W (Tc) Surface Mount D²PAK (TO-263)
Lead Free Status / RoHS Status Lead free / RoHS Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Documents & Media
Datasheets SIHB21N65EF
Video File MOSFET Technologies for Power Conversion
PCN Assembly/Origin Additional Assembly Site 21/Oct/2016
Online Catalog N-Channel Standard FETs
Product Attributes Select All
Categories
Manufacturer

Vishay Siliconix

Series -
Packaging ? Tube ?
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650V
Current - Continuous Drain (Id) @ 25°C 21A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 106nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 2322pF @ 100V
Vgs (Max) ±30V
FET Feature -
Power Dissipation (Max) 208W (Tc)
Rds On (Max) @ Id, Vgs 180 mOhm @ 11A, 10V
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package D²PAK (TO-263)
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
 
Additional Resources
Standard Package ? 50
Other Names SiHB21N65EF-GE3

12:50:10 2/23/2017

Price & Procurement
 

Quantity
All prices are in USD.
Price Break Unit Price Extended Price
1 4.84000 4.84
10 4.34600 43.46
25 4.10840 102.71
100 3.56070 356.07
250 3.37812 844.53
500 3.03116 1,515.58
1,000 2.55640 2,556.40
2,500 2.42858 6,071.45

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