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Product Overview
Digi-Key Part Number IRFD210PBF-ND
Quantity Available 4,559
Can ship immediately
Manufacturer

Manufacturer Part Number

IRFD210PBF

Description MOSFET N-CH 200V 600MA 4-DIP
Expanded Description N-Channel 200V 600mA (Ta) 1W (Ta) Through Hole 4-DIP, Hexdip, HVMDIP
Lead Free Status / RoHS Status Lead free / RoHS Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Manufacturer Standard Lead Time 11 Weeks
Documents & Media
Datasheets IRFD210
Video File MOSFET Technologies for Power Conversion
EDA / CAD Models ? Download from Ultra Librarian
Online Catalog N-Channel MOSFET (Metal Oxide)
Product Attributes Select All
Categories
Manufacturer

Vishay Siliconix

Series -
Packaging ? Tube ?
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 200V
Current - Continuous Drain (Id) @ 25°C 600mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 8.2nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 140pF @ 25V
Vgs (Max) ±20V
FET Feature -
Power Dissipation (Max) 1W (Ta)
Rds On (Max) @ Id, Vgs 1.5 Ohm @ 360mA, 10V
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package 4-DIP, Hexdip, HVMDIP
Package / Case 4-DIP (0.300", 7.62mm)
 
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Additional Resources
Standard Package ? 2,500
Other Names *IRFD210PBF

03:33:17 3/28/2017

Price & Procurement
 

Quantity
All prices are in USD.
Price Break Unit Price Extended Price
1 0.91000 0.91
10 0.81500 8.15
25 0.77320 19.33
100 0.63510 63.51
250 0.59372 148.43
500 0.52468 262.34
1,000 0.41423 414.23
2,500 0.38661 966.53
5,000 0.36728 1,836.40

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