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Product Overview
Digi-Key Part Number TK17E65WS1X-ND
Quantity Available 226
Can ship immediately
Manufacturer

Manufacturer Part Number

TK17E65W,S1X

Description MOSFET N-CH 650V 17.3A TO-220AB
Expanded Description N-Channel 650V 17.3A (Ta) 165W (Tc) Through Hole TO-220
Lead Free Status / RoHS Status Lead free / RoHS Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Manufacturer Standard Lead Time 12 Weeks
Documents & Media
Datasheets TK17E65W
Online Catalog N-Channel Standard FETs
Product Attributes Select All
Categories
Manufacturer

Toshiba Semiconductor and Storage

Series DTMOSIV
Packaging ? Tube ?
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650V
Current - Continuous Drain (Id) @ 25°C 17.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Vgs(th) (Max) @ Id 3.5V @ 900µA
Gate Charge (Qg) (Max) @ Vgs 45nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 1800pF @ 300V
Vgs (Max) ±30V
FET Feature -
Power Dissipation (Max) 165W (Tc)
Rds On (Max) @ Id, Vgs 200 mOhm @ 8.7A, 10V
Operating Temperature 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220
Package / Case TO-220-3
 
Additional Resources
Standard Package ? 50
Other Names TK17E65W,S1X(S
TK17E65WS1X

04:26:40 2/27/2017

Price & Procurement
 

Quantity
All prices are in USD.
Price Break Unit Price Extended Price
1 2.86000 2.86
10 2.55000 25.50
25 2.29520 57.38
100 2.09100 209.10
250 1.88700 471.75
500 1.69320 846.60
1,000 1.42800 1,428.00

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