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Product Overview
Digi-Key Part Number TC58BYG1S3HBAI6-ND
Quantity Available 766
Can ship immediately
Manufacturer

Manufacturer Part Number

TC58BYG1S3HBAI6

Description IC EEPROM 2GBIT 25NS 67VFBGA
Lead Free Status / RoHS Status Lead free / RoHS Compliant
Moisture Sensitivity Level (MSL) 3 (168 Hours)
Documents & Media
Datasheets TC58BYG1S3HBAI6
Online Catalog SLC NAND Flash Memory
Product Attributes Select All
Categories
Manufacturer

Toshiba Semiconductor and Storage

Series Benand™
Packaging ? Tray ?
Part Status Active
Memory Format EEPROM
Memory Type Non-Volatile
Memory Size 2Gb (256M x 8)
Speed 25ns
Interface Parallel
Voltage - Supply 1.7 V ~ 1.95 V
Operating Temperature -40°C ~ 85°C (TA)
Package / Case 67-VFBGA
Supplier Device Package 67-VFBGA (6.5x8)
 
Additional Resources
Standard Package ? 338
Other Names TC58BYG1S3HBAI6JDH
TC58BYG1S3HBAI6YCL

14:37:44 3/30/2017

Price & Procurement
 

Quantity
All prices are in USD.
Price Break Unit Price Extended Price
1 2.74000 2.74
10 2.46400 24.64
25 2.42440 60.61
50 2.41800 120.90
100 2.16060 216.06
250 2.09040 522.60
676 2.08260 1,407.84

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