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Product Overview
Digi-Key Part Number SCT3120ALGC11-ND
Quantity Available 516
Can ship immediately

Manufacturer Part Number


Description MOSFET NCH 650V 21A TO247N
Expanded Description N-Channel 650V 21A (Tc) 103W (Tc) Through Hole TO-247N
Lead Free Status / RoHS Status Lead free / RoHS Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Manufacturer Standard Lead Time 18 Weeks
Documents & Media
Datasheets SCT3120AL
Product Training Modules SiC MOSFETs
Featured Product 3rd Generation Trench-Type SiC MOSFETs
Online Catalog N-Channel SiCFET (Silicon Carbide)
Product Attributes Select All

Rohm Semiconductor

Series -
Packaging ? Tube ?
Part Status Active
FET Type N-Channel
Technology SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss) 650V
Current - Continuous Drain (Id) @ 25°C 21A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 18V
Vgs(th) (Max) @ Id 5.6V @ 3.33mA
Gate Charge (Qg) (Max) @ Vgs 38nC @ 18V
Input Capacitance (Ciss) (Max) @ Vds 460pF @ 500V
Vgs (Max) +22V, -4V
FET Feature -
Power Dissipation (Max) 103W (Tc)
Rds On (Max) @ Id, Vgs 156 mOhm @ 6.7A, 18V
Operating Temperature 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-247N
Package / Case TO-247-3
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Additional Resources
Standard Package ? 30

21:35:46 3/25/2017

Price & Procurement

All prices are in USD.
Price Break Unit Price Extended Price
1 8.01000 8.01
10 7.20600 72.06
25 6.56520 164.13
100 5.92460 592.46
250 5.44424 1,361.06
500 4.96388 2,481.94
1,000 4.32338 4,323.38

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