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Product Overview
Digi-Key Part Number SCT3080KLGC11-ND
Quantity Available 327
Can ship immediately

Manufacturer Part Number


Description MOSFET NCH 1.2KV 31A TO247N
Expanded Description N-Channel 1200V (1.2kV) 31A (Tc) 165W (Tc) Through Hole TO-247N
Lead Free Status / RoHS Status Lead free / RoHS Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Manufacturer Standard Lead Time 18 Weeks
Documents & Media
Datasheets SCT3080KL
Product Training Modules SiC MOSFETs
Featured Product 3rd Generation Trench-Type SiC MOSFETs
Online Catalog N-Channel SiCFET (Silicon Carbide)
Product Attributes Select All

Rohm Semiconductor

Series -
Packaging ? Tube ?
Part Status Active
FET Type N-Channel
Technology SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss) 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C 31A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 18V
Vgs(th) (Max) @ Id 5.6V @ 5mA
Gate Charge (Qg) (Max) @ Vgs 60nC @ 18V
Input Capacitance (Ciss) (Max) @ Vds 785pF @ 800V
Vgs (Max) +22V, -4V
FET Feature -
Power Dissipation (Max) 165W (Tc)
Rds On (Max) @ Id, Vgs 104 mOhm @ 10A, 18V
Operating Temperature 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-247N
Package / Case TO-247-3
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Additional Resources
Standard Package ? 30

01:18:40 3/29/2017

Price & Procurement

All prices are in USD.
Price Break Unit Price Extended Price
1 13.05000 13.05
10 11.86500 118.65
25 10.97520 274.38
100 10.08530 1,008.53
250 9.19536 2,298.84
500 8.60212 4,301.06

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