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Product Overview
Digi-Key Part Number SCT3022ALGC11-ND
Quantity Available 381
Can ship immediately

Manufacturer Part Number


Description MOSFET NCH 650V 93A TO247N
Expanded Description N-Channel 650V 93A (Tc) 339W (Tc) Through Hole TO-247N
Lead Free Status / RoHS Status Lead free / RoHS Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Manufacturer Standard Lead Time 18 Weeks
Documents & Media
Datasheets SCT3022AL
Product Training Modules SiC MOSFETs
Featured Product 3rd Generation Trench-Type SiC MOSFETs
Online Catalog N-Channel SiCFET (Silicon Carbide)
Product Attributes Select All

Rohm Semiconductor

Series -
Packaging ? Tube ?
Part Status Active
FET Type N-Channel
Technology SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss) 650V
Current - Continuous Drain (Id) @ 25°C 93A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 18V
Vgs(th) (Max) @ Id 5.6V @ 18.2mA
Gate Charge (Qg) (Max) @ Vgs 133nC @ 18V
Input Capacitance (Ciss) (Max) @ Vds 2208pF @ 500V
Vgs (Max) +22V, -4V
FET Feature -
Power Dissipation (Max) 339W (Tc)
Rds On (Max) @ Id, Vgs 28.6 mOhm @ 36A, 18V
Operating Temperature 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-247N
Package / Case TO-247-3
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Additional Resources
Standard Package ? 30

19:59:58 3/25/2017

Price & Procurement

All prices are in USD.
Price Break Unit Price Extended Price
1 45.65000 45.65
10 42.68800 426.88
25 39.48000 987.00
100 37.01250 3,701.25

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