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Product Overview
Digi-Key Part Number SCT2120AFC-ND
Quantity Available 871
Can ship immediately
Manufacturer

Manufacturer Part Number

SCT2120AFC

Description MOSFET N-CH 650V 29A TO-220AB
Expanded Description N-Channel 650V 29A (Tc) 165W (Tc) Through Hole TO-220AB
Lead Free Status / RoHS Status Lead free / RoHS Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Manufacturer Standard Lead Time 18 Weeks
Documents & Media
Datasheets SCT2120AF Datasheet
Mfg Application Notes SiC Power Devices and Modules
Product Training Modules SiC MOSFETs
Video File ROHM Semiconductor SiC MOSFET Technology
Online Catalog N-Channel SiCFET (Silicon Carbide)
Product Attributes Select All
Categories
Manufacturer

Rohm Semiconductor

Series -
Packaging ? Tube ?
Part Status Active
FET Type N-Channel
Technology SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss) 650V
Current - Continuous Drain (Id) @ 25°C 29A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 18V
Vgs(th) (Max) @ Id 4V @ 3.3mA
Gate Charge (Qg) (Max) @ Vgs 61nC @ 18V
Input Capacitance (Ciss) (Max) @ Vds 1200pF @ 500V
Vgs (Max) +22V, -6V
FET Feature -
Power Dissipation (Max) 165W (Tc)
Rds On (Max) @ Id, Vgs 156 mOhm @ 10A, 18V
Operating Temperature 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220AB
Package / Case TO-220-3
 
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Additional Resources
Standard Package ? 1,000

17:58:24 3/22/2017

Price & Procurement
 

Quantity
All prices are in USD.
Price Break Unit Price Extended Price
1 14.28000 14.28
10 12.97800 129.78
25 12.00480 300.12
100 11.03130 1,103.13
250 10.05796 2,514.49
500 9.40906 4,704.53

Submit a request for quotation on quantities greater than those displayed.

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