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Product Overview
Digi-Key Part Number IPW65R041CFD-ND
Quantity Available 1,579
Can ship immediately
Manufacturer

Manufacturer Part Number

IPW65R041CFD

Description MOSFET N CH 650V 68.5A PG-TO247
Expanded Description N-Channel 650V 68.5A (Tc) 500W (Tc) Through Hole PG-TO247-3
Lead Free Status / RoHS Status Lead free / RoHS Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Manufacturer Standard Lead Time 16 Weeks
Documents & Media
Datasheets IPW65R041CFD
Featured Product Data Processing Systems
Online Catalog N-Channel MOSFET (Metal Oxide)
Product Attributes Select All
Categories
Manufacturer

Infineon Technologies

Series CoolMOS™
Packaging ? Tube ?
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650V
Current - Continuous Drain (Id) @ 25°C 68.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Vgs(th) (Max) @ Id 4.5V @ 3.3mA
Gate Charge (Qg) (Max) @ Vgs 300nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 8400pF @ 100V
Vgs (Max) ±20V
FET Feature -
Power Dissipation (Max) 500W (Tc)
Rds On (Max) @ Id, Vgs 41 mOhm @ 33.1A, 10V
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package PG-TO247-3
Package / Case TO-247-3
 
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Additional Resources
Standard Package ? 240
Other Names IPW65R041CFDFKSA1
SP000756288

12:48:42 2/27/2017

Price & Procurement
 

Quantity
All prices are in USD.
Price Break Unit Price Extended Price
1 12.06000 12.06
10 11.08300 110.83
100 9.36010 936.01
500 8.32648 4,163.24
1,000 7.63739 7,637.39

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