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Product Overview
Digi-Key Part Number IPW65R037C6FKSA1-ND
Quantity Available 154
Can ship immediately

Manufacturer Part Number


Description MOSFET N-CH 650V 83.2A TO247-3
Expanded Description N-Channel 650V 83.2A (Tc) 500W (Tc) Through Hole PG-TO247-3
Lead Free Status / RoHS Status Lead free / RoHS Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Manufacturer Standard Lead Time 12 Weeks
Documents & Media
Datasheets IPW65R037C6
Featured Product Data Processing Systems
Online Catalog N-Channel MOSFET (Metal Oxide)
Product Attributes Select All

Infineon Technologies

Series CoolMOS™ C6
Packaging ? Tube ?
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650V
Current - Continuous Drain (Id) @ 25°C 83.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Vgs(th) (Max) @ Id 3.5V @ 3.3mA
Gate Charge (Qg) (Max) @ Vgs 330nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 7240pF @ 100V
Vgs (Max) ±20V
FET Feature -
Power Dissipation (Max) 500W (Tc)
Rds On (Max) @ Id, Vgs 37 mOhm @ 33.1A, 10V
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package PG-TO247-3
Package / Case TO-247-3
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Additional Resources
Standard Package ? 240
Other Names SP000756284

01:02:52 2/22/2017

Price & Procurement

All prices are in USD.
Price Break Unit Price Extended Price
1 14.05000 14.05
10 12.91000 129.10
100 10.90320 1,090.32
500 9.69920 4,849.60
1,000 8.89650 8,896.50

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