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Product Overview
Digi-Key Part Number IPW60R299CP-ND
Quantity Available 150
Can ship immediately
Manufacturer

Manufacturer Part Number

IPW60R299CP

Description MOSFET N-CH 600V 11A TO-247
Expanded Description N-Channel 600V 11A (Tc) 96W (Tc) Through Hole PG-TO247-3
Lead Free Status / RoHS Status Lead free / RoHS Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Manufacturer Standard Lead Time 12 Weeks
Documents & Media
Datasheets IPW60R299CP
Other Related Documents Part Number Guide
Product Training Modules CoolMOS™ CP High Voltage MOSFETs Converters
Featured Product Data Processing Systems
Online Catalog N-Channel MOSFET (Metal Oxide)
Product Attributes Select All
Categories
Manufacturer

Infineon Technologies

Series CoolMOS™
Packaging ? Tube ?
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600V
Current - Continuous Drain (Id) @ 25°C 11A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Vgs(th) (Max) @ Id 3.5V @ 440µA
Gate Charge (Qg) (Max) @ Vgs 29nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 1100pF @ 100V
Vgs (Max) ±20V
FET Feature -
Power Dissipation (Max) 96W (Tc)
Rds On (Max) @ Id, Vgs 299 mOhm @ 6.6A, 10V
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package PG-TO247-3
Package / Case TO-247-3
 
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Additional Resources
Standard Package ? 240
Other Names IPW60R299CPFKSA1
IPW60R299CPX
IPW60R299CPXK
SP000103251

08:02:46 3/28/2017

Price & Procurement
 

Quantity
All prices are in USD.
Price Break Unit Price Extended Price
1 3.25000 3.25
10 2.91800 29.18
100 2.39050 239.05
500 2.03496 1,017.48
1,000 1.71623 1,716.23

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