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Product Overview
Digi-Key Part Number IPU60R2K1CEBKMA1-ND
Quantity Available 1,944
Can ship immediately

Manufacturer Part Number


Description MOSFET N-CH 600V TO-251-3
Expanded Description N-Channel 600V 2.3A (Tc) 22W (Tc) Through Hole PG-TO251-3
Lead Free Status / RoHS Status Lead free / RoHS Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Documents & Media
Datasheets IPD60R2K1CE, IPU60R2K1CE
Other Related Documents Part Number Guide
Featured Product Data Processing Systems
PCN Design/Specification Assembly/MSL Chg 2/Oct/2015
Online Catalog N-Channel MOSFET (Metal Oxide)
Product Attributes Select All

Infineon Technologies

Series CoolMOS™ CE
Packaging ? Tube ?
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600V
Current - Continuous Drain (Id) @ 25°C 2.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Vgs(th) (Max) @ Id 3.5V @ 60µA
Gate Charge (Qg) (Max) @ Vgs 6.7nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 140pF @ 100V
Vgs (Max) ±20V
FET Feature -
Power Dissipation (Max) 22W (Tc)
Rds On (Max) @ Id, Vgs 2.1 Ohm @ 760mA, 10V
Operating Temperature -40°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package PG-TO251-3
Package / Case TO-251-3 Short Leads, IPak, TO-251AA
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Additional Resources
Standard Package ? 1,500
Other Names SP001276064

22:53:14 3/29/2017

Price & Procurement

All prices are in USD.
Price Break Unit Price Extended Price
1 0.51000 0.51
10 0.43400 4.34
100 0.32430 32.43
500 0.25480 127.40
1,000 0.19689 196.89

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