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Product Overview
Digi-Key Part Number IPS65R1K5CEAKMA1-ND
Quantity Available 3,087
Can ship immediately

Manufacturer Part Number


Description MOSFET N-CH 650V TO-251-3
Expanded Description N-Channel 650V 3.1A (Tc) 28W (Tc) Through Hole TO-251
Lead Free Status / RoHS Status Lead free / RoHS Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Manufacturer Standard Lead Time 6 Weeks
Documents & Media
Datasheets IPS65R1K5CE
Featured Product Data Processing Systems
Online Catalog N-Channel MOSFET (Metal Oxide)
Product Attributes Select All

Infineon Technologies

Series CoolMOS™ CE
Packaging ? Tube ?
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650V
Current - Continuous Drain (Id) @ 25°C 3.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Vgs(th) (Max) @ Id 3.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs 10.5nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 225pF @ 100V
Vgs (Max) ±20V
FET Feature -
Power Dissipation (Max) 28W (Tc)
Rds On (Max) @ Id, Vgs 1.5 Ohm @ 1A, 10V
Operating Temperature -40°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-251
Package / Case TO-251-3 Stub Leads, IPak
For Use With
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Additional Resources
Standard Package ? 1,500
Other Names SP001276050

20:12:50 2/27/2017

Price & Procurement

All prices are in USD.
Price Break Unit Price Extended Price
1 0.57000 0.57
10 0.50300 5.03
100 0.38530 38.53
500 0.30460 152.30
1,000 0.24368 243.68

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