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Product Overview
Digi-Key Part Number IPS65R1K4C6AKMA1-ND
Quantity Available 1,607
Can ship immediately
Manufacturer

Manufacturer Part Number

IPS65R1K4C6AKMA1

Description MOSFET N-CH 650V 3.2A TO-251
Expanded Description N-Channel 650V 3.2A (Tc) 28W (Tc) Through Hole PG-TO251-3
Lead Free Status / RoHS Status Lead free / RoHS Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Manufacturer Standard Lead Time 12 Weeks
Documents & Media
Datasheets IPS65R1K4C6
Featured Product Data Processing Systems
Online Catalog N-Channel MOSFET (Metal Oxide)
Product Attributes Select All
Categories
Manufacturer

Infineon Technologies

Series CoolMOS™
Packaging ? Tube ?
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650V
Current - Continuous Drain (Id) @ 25°C 3.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Vgs(th) (Max) @ Id 3.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs 10.5nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 225pF @ 100V
Vgs (Max) ±20V
FET Feature -
Power Dissipation (Max) 28W (Tc)
Rds On (Max) @ Id, Vgs 1.4 Ohm @ 1A, 10V
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package PG-TO251-3
Package / Case TO-251-3 Stub Leads, IPak
 
Additional Resources
Standard Package ? 1,500
Other Names SP000991120

17:51:26 2/21/2017

Price & Procurement
 

Quantity
All prices are in USD.
Price Break Unit Price Extended Price
1 0.83000 0.83
10 0.74300 7.43
100 0.57890 57.89
500 0.47824 239.12
1,000 0.37755 377.55

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