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Product Overview
Digi-Key Part Number IPP65R125C7XKSA1-ND
Quantity Available 554
Can ship immediately
Manufacturer

Manufacturer Part Number

IPP65R125C7XKSA1

Description MOSFET N-CH 650V 18A TO220
Expanded Description N-Channel 650V 18A (Tc) 101W (Tc) Through Hole PG-TO-220-3
Lead Free Status / RoHS Status Lead free / RoHS Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Manufacturer Standard Lead Time 20 Weeks
Documents & Media
Datasheets IPP65R125C7
Other Related Documents Part Number Guide
Featured Product Data Processing Systems
PCN Assembly/Origin Wafer Process Update 28/Sep/2016
Online Catalog N-Channel MOSFET (Metal Oxide)
Product Attributes Select All
Categories
Manufacturer

Infineon Technologies

Series CoolMOS™ C7
Packaging ? Tube ?
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650V
Current - Continuous Drain (Id) @ 25°C 18A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Vgs(th) (Max) @ Id 4V @ 440µA
Gate Charge (Qg) (Max) @ Vgs 35nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 1670pF @ 400V
Vgs (Max) ±20V
FET Feature -
Power Dissipation (Max) 101W (Tc)
Rds On (Max) @ Id, Vgs 125 mOhm @ 8.9A, 10V
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package PG-TO-220-3
Package / Case TO-220-3
 
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Additional Resources
Standard Package ? 500
Other Names SP001080132

02:38:06 3/27/2017

Price & Procurement
 

Quantity
All prices are in USD.
Price Break Unit Price Extended Price
1 5.34000 5.34
10 4.79200 47.92
100 3.92630 392.63
500 3.34238 1,671.19
1,000 2.81887 2,818.87

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