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Product Overview
Digi-Key Part Number IPP60R199CPXKSA1-ND
Quantity Available 502
Can ship immediately
Manufacturer

Manufacturer Part Number

IPP60R199CPXKSA1

Description MOSFET N-CH 650V 16A TO220-3
Expanded Description N-Channel 650V 16A (Tc) 139W (Tc) Through Hole PG-TO-220-3
Lead Free Status / RoHS Status Lead free / RoHS Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Manufacturer Standard Lead Time 12 Weeks
Documents & Media
Datasheets IPP60R199CP
Other Related Documents Part Number Guide
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Online Catalog N-Channel MOSFET (Metal Oxide)
Product Attributes Select All
Categories
Manufacturer

Infineon Technologies

Series CoolMOS™
Packaging ? Tube ?
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650V
Current - Continuous Drain (Id) @ 25°C 16A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Vgs(th) (Max) @ Id 3.5V @ 660µA
Gate Charge (Qg) (Max) @ Vgs 43nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 1520pF @ 100V
Vgs (Max) ±20V
FET Feature -
Power Dissipation (Max) 139W (Tc)
Rds On (Max) @ Id, Vgs 199 mOhm @ 9.9A, 10V
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package PG-TO-220-3
Package / Case TO-220-3
 
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Additional Resources
Standard Package ? 500
Other Names IPP60R199CP
IPP60R199CP-ND
IPP60R199CPAKSA1
IPP60R199CPIN
IPP60R199CPIN-ND
IPP60R199CPX
IPP60R199CPXK
SP000084278

19:10:35 3/29/2017

Price & Procurement
 

Quantity
All prices are in USD.
Price Break Unit Price Extended Price
1 3.48000 3.48
10 3.13000 31.30
100 2.56430 256.43
500 2.18294 1,091.47
1,000 1.84103 1,841.03

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