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Product Overview
Digi-Key Part Number 1242-1189-ND
Quantity Available 263
Can ship immediately
Manufacturer

Manufacturer Part Number

GA20JT12-263

Description TRANS SJT 1200V 45A
Expanded Description 1200V (1.2kV) 45A (Tc) 282W (Tc)
Lead Free Status / RoHS Status Lead free / RoHS Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Manufacturer Standard Lead Time 18 Weeks
Documents & Media
Datasheets GA20JT12-263
Online Catalog SiC (Silicon Carbide Junction Transistor)
Product Attributes Select All
Categories
Manufacturer

GeneSiC Semiconductor

Series -
Packaging ? -
Part Status Active
FET Type -
Technology SiC (Silicon Carbide Junction Transistor)
Drain to Source Voltage (Vdss) 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C 45A (Tc)
Drive Voltage (Max Rds On, Min Rds On) -
Vgs(th) (Max) @ Id -
Gate Charge (Qg) (Max) @ Vgs -
Input Capacitance (Ciss) (Max) @ Vds 3091pF @ 800V
Vgs (Max) 3.44V
FET Feature -
Power Dissipation (Max) 282W (Tc)
Rds On (Max) @ Id, Vgs 60 mOhm @ 20A
Operating Temperature 175°C (TJ)
Mounting Type -
Supplier Device Package -
Package / Case -
 
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Additional Resources
Standard Package ? 50
Other Names 1242-1189
GA20JT12-247ISO
GA20JT12247ISO

05:20:51 3/28/2017

Price & Procurement
 

Quantity
All prices are in USD.
Price Break Unit Price Extended Price
1 36.28000 36.28
10 33.55800 335.58
25 30.83720 770.93
100 28.66060 2,866.06

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