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Product Overview
Digi-Key Part Number 1242-1318-ND
Quantity Available 386
Can ship immediately
Manufacturer

Manufacturer Part Number

GA10SICP12-263

Description TRANS SJT 1200V 25A TO263-7
Expanded Description 1200V (1.2kV) 25A (Tc) 170W (Tc) Surface Mount D2PAK (7-Lead)
Lead Free Status / RoHS Status Lead free / RoHS Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Manufacturer Standard Lead Time 18 Weeks
Documents & Media
Datasheets GA10SICP12-263
Online Catalog SiC (Silicon Carbide Junction Transistor)
Product Attributes Select All
Categories
Manufacturer

GeneSiC Semiconductor

Series -
Packaging ? Tube ?
Part Status Active
FET Type -
Technology SiC (Silicon Carbide Junction Transistor)
Drain to Source Voltage (Vdss) 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C 25A (Tc)
Drive Voltage (Max Rds On, Min Rds On) -
Vgs(th) (Max) @ Id -
Gate Charge (Qg) (Max) @ Vgs -
Input Capacitance (Ciss) (Max) @ Vds 1403pF @ 800V
Vgs (Max) 3.5V
FET Feature -
Power Dissipation (Max) 170W (Tc)
Rds On (Max) @ Id, Vgs 100 mOhm @ 10A
Operating Temperature 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package D2PAK (7-Lead)
Package / Case TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
 
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Additional Resources
Standard Package ? 50
Other Names 1242-1318
GA10SICP12-263-ND

06:03:22 2/24/2017

Price & Procurement
 

Quantity
All prices are in USD.
Price Break Unit Price Extended Price
1 39.49000 39.49
10 36.52900 365.29
25 33.56720 839.18
100 31.19790 3,119.79
250 28.63096 7,157.74

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