Product Index > Discrete Semiconductor Products > FETs - Single > Infineon Technologies IPD068N10N3 G
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Digi-Key Part Number IPD068N10N3 G-ND
Price Break Unit Price Extended Price
2,500 0.84510 2,112.75
Manufacturer Part Number IPD068N10N3 G
Description MOSFET N-CH 100V 90A TO252-3
Lead Free Status / RoHS Status Lead free / RoHS Compliant Moisture Sensitivity Level (MSL) 1 (Unlimited)
Quantity Item Number
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Cover Tape Width Update 17/Jun/2015
Cover Tape Width Cancellation 14/Jul/2015
Standard Package 2,500
Packaging Tape & Reel (TR)
FET Type MOSFET N-Channel, Metal Oxide
FET Feature Standard
Drain to Source Voltage (Vdss) 100V
Current - Continuous Drain (Id) @ 25°C 90A (Tc)
Rds On (Max) @ Id, Vgs 6.8 mOhm @ 90A, 10V
Vgs(th) (Max) @ Id 3.5V @ 90µA
Gate Charge (Qg) @ Vgs 68nC @ 10V
Input Capacitance (Ciss) @ Vds 4910pF @ 50V
Power - Max 150W
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package PG-TO252-3
Other Names IPD068N10N3GBTMA1 SP000469892