Product Index > Discrete Semiconductor Products > Transistors (BJT) - Single > Toshiba Semiconductor and Storage 2SA965-Y(TE6,F,M)
All prices are in US dollars.
Digi-Key Part Number 2SA965-Y(TE6,F,M)-ND
Price Break Unit Price Extended Price
3,000 0.19530 585.90
Manufacturer Part Number 2SA965-Y(TE6,F,M)
Description TRANS PNP 120V 0.8A TO-92
Lead Free Status / RoHS Status Lead free / RoHS Compliant Moisture Sensitivity Level (MSL) 1 (Unlimited)
Quantity Item Number
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Standard Package 3,000
Packaging Tape & Box (TB)
Transistor Type PNP
Current - Collector (Ic) (Max) 800mA
Voltage - Collector Emitter Breakdown (Max) 120V
Vce Saturation (Max) @ Ib, Ic 1V @ 50mA, 500mA
Current - Collector Cutoff (Max) 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 100mA, 5V
Power - Max 900mW
Frequency - Transition 120MHz
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 Long Body
Supplier Device Package LSTM