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- Toshiba Semiconductor & Storage offers a broad range of enabling technology solutions that allow OEMs, ODMs, CMs and fabless chip companies to develop advanced integrated products for the computing, networking, communications, digital consumer, automotive and other markets.
45 V and 60 V Ultra-High-Efficiency MOSFETs
Toshiba's 45 V and 60 V, N-channel, MOSFETs deliver high-efficiency at all loads and are available in a DSOP Advance, both-sided cooling package.
An integrated load switch from Toshiba allows a board designer to combine these components into a single small package device.
30 V and 40 V Ultra-High Efficiency MOSFETs
Toshiba’s ultra-high efficiency, low-voltage MOSFETs has expanded by adding 30 V and 40 V devices and available in TSON Advance and SOP Advance packaging.
TLP5751/2/4 IGBT Gate Driver Couplers
Toshiba's TLP5751/2/4 consist of a GaAℓAs infrared light-emitting diode and integrated high-gain, high-speed photodetector and is housed in a 6-pin SO6L package.
Low Power Discrete Semiconductors for the Internet of Things (IoT)
Toshiba offers discrete components ideal for your next small form-factor project, emphasizing industry-leading performance, and low power consumption.
Optically Coupled Isolation Amplifiers
Toshiba has equipped the photocouplers (TLP7820:SO8L package and TLP7920:DIP8 package) with a delta-sigma analog to digital converter at the input side.
Duration: 5 minutes
TCR5AM series is suited for the application which needs high current and low dropout
General Purpose Discrete Items
Duration: 10 minutes
Overview of the general purpose discrete items including diodes, MOSFETs, bipolar transistors, and transistors with built-in resistors.
Featuring low dynamic resistance and lower clamp voltage versus other protection devices like varistors.
Load Switch IC Overview
Introduction to load switch ICs and Toshiba's IC product portfolio which highlights the features, benefits, and also provides examples of IC applications.
Toshiba TVS Diode (EAP-IV)
Toshiba’s 4th generation ESD protection diode (EAP-IV), achieves top level low dynamic resistance and low clamping voltages. It protects devices from ESD circuit destruction and degradation over time.
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