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- EPC is the leader in enhancement mode gallium nitride based power management devices. EPC was the first to introduce enhancement-mode gallium-nitride-on-silicon (eGaN) FETs as power MOSFET replacements in applications such as DC-DC converters, wireless power transfer, envelope tracking, RF transmission, power inverters, remote sensing technology (LiDAR), and class-D audio amplifiers with device performance many times greater than the best silicon power MOSFETs.
Gen 5 eGaN® FET
EPC’s latest generation eGaN technology cuts the size of their devices in half, but triples their performance.
GaN Performance at MOSFET Value
EPC's GaN today is facing a period of extremely rapid growth because semiconductors using this material give companies a major performance and cost advantage.
EPC9126 LiDAR Demo Board
EPC's EPC9126 development board is primarily intended to drive laser diodes with high current pulses with total pulse widths as low as 5 ns (10% of peak).
EPC9121 - 10W Multi-Mode Wireless Power Kit eGaN Demo Board
EPC eGaN® FETs and ICs enable multi-mode capability in a single amplifier, resulting in highly efficient wireless power systems such as the EPC9121 WiPo Demo Board.
EPC9065 Class-D Amplifier Development Board
EPC's EPC9065 is a high efficiency, Zero Voltage Switching (ZVS) differential mode Class-D amplifier development board that operates at, but is not limited to, 6.78 MHz (lowest ISM band).
EPC9052/53/54 Development Boards
EPC's GaN-based differential mode development boards that can operate up to 30 MHz.
eGaN® FET Reliability
Duration: 5 minutes
Significant performance and size advantages over silicon power MOSFETs allow for improved system efficiency, reduced system costs, and reduced design size.
eGaN-based Eighth Brick Converter
Review of the design specifications of a 500 W 1/8th brick converter
eGaN Integrated GaN Power
eGaN technology offers higher power density through size reduction and speed reduction, and parasitic reduction.
Driving eGaN FETs with the LM5113
Duration: 15 minutes
The advantages of EPC’s enhancement mode gallium nitride transistors and the key design challenges of implementing the new device technology.
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