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- EPC is the leader in enhancement mode gallium nitride based power management devices. EPC was the first to introduce enhancement-mode gallium-nitride-on-silicon (eGaN) FETs as power MOSFET replacements in applications such as DC-DC converters, wireless power transfer, envelope tracking, RF transmission, power inverters, remote sensing technology (LiDAR), and class-D audio amplifiers with device performance many times greater than the best silicon power MOSFETs.

Newest Products View All (36)

Image of EPC's Gen 5 eGaN® FET

Gen 5 eGaN® FET

EPC’s latest generation eGaN technology cuts the size of their devices in half, but triples their performance.

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Image of EPC's GaN® Performance at MOSFET Value

GaN Performance at MOSFET Value

EPC's GaN today is facing a period of extremely rapid growth because semiconductors using this material give companies a major performance and cost advantage.

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Image of EPC's EPC9126 LiDAR Demo Board

EPC9126 LiDAR Demo Board

EPC's EPC9126 development board is primarily intended to drive laser diodes with high current pulses with total pulse widths as low as 5 ns (10% of peak).

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Image of EPC's EPC9121 eGaN FETs and ICs

EPC9121 - 10W Multi-Mode Wireless Power Kit eGaN Demo Board

EPC eGaN® FETs and ICs enable multi-mode capability in a single amplifier, resulting in highly efficient wireless power systems such as the EPC9121 WiPo Demo Board.

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Image of EPC EPC9065 Class-D Amplifier Development Board

EPC9065 Class-D Amplifier Development Board

EPC's EPC9065 is a high efficiency, Zero Voltage Switching (ZVS) differential mode Class-D amplifier development board that operates at, but is not limited to, 6.78 MHz (lowest ISM band).

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Image of EPC's EPC9052/53/54 Development Boards

EPC9052/53/54 Development Boards

EPC's GaN-based differential mode development boards that can operate up to 30 MHz.

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Product Training Modules View All (10)


eGaN® FET Reliability

Duration: 5 minutes

Significant performance and size advantages over silicon power MOSFETs allow for improved system efficiency, reduced system costs, and reduced design size.

eGaN-based Eighth Brick Converter

eGaN-based Eighth Brick Converter

Duration: 5 minutes

Review of the design specifications of a 500 W 1/8th brick converter


eGaN Integrated GaN Power

Duration: 5 minutes

eGaN technology offers higher power density through size reduction and speed reduction, and parasitic reduction.


Driving eGaN FETs with the LM5113

Duration: 15 minutes

The advantages of EPC’s enhancement mode gallium nitride transistors and the key design challenges of implementing the new device technology.

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