2nd Gen eGaN FETs

Second Gen Lead Free eGaN® FETs Overview


This tutorial will discuss the performance enhancements provided in this next generation of devices. In March, 2011 Efficient Power Conversion Corporation (EPC) launched the first two part numbers in a family of second generation enhancement mode gallium nitride (eGaN) FETs. These new products are lead free, halogen free, RoHS compliant, and have significant improvements in their overall performance. These initial lead free products join the family of 40 V and 100 V eGaN FETs introduced in March, 2010. Additional lead free products ranging between 40 V and 200 V are planned for introduction in 2011.
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Related Parts
Manufacturer Part NumberDescriptionFET TypeFET FeatureAvailable QuantityBuy Now
EPC2015TRANS GAN 40V 33A BUMPED DIEGaNFET N-Channel, Gallium NitrideLogic Level Gate1616 -

EPC2001TRANS GAN 100V 25A BUMPED DIEGaNFET N-Channel, Gallium NitrideLogic Level Gate10929 -

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PTM Published on: 2011-10-28