Second Gen Lead Free eGaN® FETs Overview
This tutorial will discuss the performance enhancements provided in this next generation of devices. In March, 2011 Efficient Power Conversion Corporation (EPC) launched the first two part numbers in a family of second generation enhancement mode gallium nitride (eGaN) FETs. These new products are lead free, halogen free, RoHS compliant, and have significant improvements in their overall performance. These initial lead free products join the family of 40 V and 100 V eGaN FETs introduced in March, 2010. Additional lead free products ranging between 40 V and 200 V are planned for introduction in 2011.
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PTM Published on: 2011-10-28