2nd Gen eGaN FETs

Second Gen Lead Free eGaN® FETs Overview

EPC

This tutorial will discuss the performance enhancements provided in this next generation of devices. These new products are lead free, halogen free, RoHS compliant, and have significant improvements in their overall performance. These initial lead free products join the family of 40V and 100V eGaN FETs introduced in March, 2010.
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Related Parts

ImageManufacturer Part NumberDescriptionPart StatusFET TypeAvailable Quantity
EPC2015 datasheet linkTRANS GAN 40V 33A BUMPED DIEEPC2015TRANS GAN 40V 33A BUMPED DIEActiveGaNFET N-Channel, Gallium Nitride235 - Immediate
EPC2015 product page link
EPC2001 datasheet linkTRANS GAN 100V 25A BUMPED DIEEPC2001TRANS GAN 100V 25A BUMPED DIEActiveGaNFET N-Channel, Gallium Nitride246 - Immediate
EPC2001 product page link
PTM Published on: 2011-10-28