Paralleling eGaN FETs

Paralleling eGaN® FETs


This presentation will detail the work EPC has done to make it as easy as possible to use eGaN FETs in power conversion applications where more than one device working in parallel is needed to meet the output power requirements. These challenges will be presented and recommendations made to ensure the best performance from a paralleled switch converter. The discussion will focus on a single gate driver per switch and the half bridge topology.
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Related Parts
ImageManufacturer Part NumberDescriptionFET TypeFET FeatureAvailable QuantityBuy Now
TRANS GAN 40V 10A BUMPED DIEEPC2014TRANS GAN 40V 10A BUMPED DIEGaNFET N-Channel, Gallium NitrideStandard3044 - Immediate
TRANS GAN 100V 6A BUMPED DIEEPC2007TRANS GAN 100V 6A BUMPED DIEGaNFET N-Channel, Gallium NitrideStandard7602 - Immediate
TRANS GAN 200V 3A BUMPED DIEEPC2012TRANS GAN 200V 3A BUMPED DIEGaNFET N-Channel, Gallium NitrideStandard9358 - Immediate
TRANS GAN 40V 33A BUMPED DIEEPC2015TRANS GAN 40V 33A BUMPED DIEGaNFET N-Channel, Gallium NitrideStandard3092 - Immediate
TRANS GAN 100V 25A BUMPED DIEEPC2001TRANS GAN 100V 25A BUMPED DIEGaNFET N-Channel, Gallium NitrideStandard25995 - Immediate
TRANS GAN 200V 12A BUMPED DIEEPC2010TRANS GAN 200V 12A BUMPED DIEGaNFET N-Channel, Gallium NitrideStandard9025 - Immediate
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PTM Published on: 2012-04-26