Paralleling eGaN FETs

Paralleling eGaN® FETs

EPC

This presentation will detail the work EPC has done to make it as easy as possible to use eGaN FETs in power conversion applications where more than one device working in parallel is needed to meet the output power requirements. These challenges will be presented and recommendations made to ensure the best performance from a paralleled switch converter. The discussion will focus on a single gate driver per switch and the half bridge topology.
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Related Parts
Manufacturer Part NumberDescriptionFET TypeFET FeatureAvailable QuantityBuy Now
EPC2007TRANS GAN 100V 6A BUMPED DIEGaNFET N-Channel, Gallium NitrideLogic Level Gate2678 - Immediate
EPC2012TRANS GAN 200V 3A BUMPED DIEGaNFET N-Channel, Gallium NitrideLogic Level Gate10441 - Immediate
EPC2015TRANS GAN 40V 33A BUMPED DIEGaNFET N-Channel, Gallium NitrideLogic Level Gate1813 - Immediate
EPC2001TRANS GAN 100V 25A BUMPED DIEGaNFET N-Channel, Gallium NitrideLogic Level Gate10796 - Immediate
EPC2010TRANS GAN 200V 12A BUMPED DIEGaNFET N-Channel, Gallium NitrideLogic Level Gate9129 - Immediate
EPC2014TRANS GAN 40V 10A BUMPED DIEGaNFET N-Channel, Gallium NitrideLogic Level Gate75 - Immediate
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PTM Published on: 2012-04-26