Paralleling eGaN FETs

Paralleling eGaN® FETs


This presentation will detail the work EPC has done to make it as easy as possible to use eGaN FETs in power conversion applications where more than one device working in parallel is needed to meet the output power requirements. These challenges will be presented and recommendations made to ensure the best performance from a paralleled switch converter. The discussion will focus on a single gate driver per switch and the half bridge topology.
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Related Parts

ImageManufacturer Part NumberDescriptionPart StatusFET TypeAvailable Quantity
EPC2007 datasheet linkTRANS GAN 100V 6A BUMPED DIEEPC2007TRANS GAN 100V 6A BUMPED DIEDiscontinuedGaNFET N-Channel, Gallium Nitride41 - Immediate
EPC2007 product page link
EPC2012 datasheet linkTRANS GAN 200V 3A BUMPED DIEEPC2012TRANS GAN 200V 3A BUMPED DIEDiscontinuedGaNFET N-Channel, Gallium Nitride45 - Immediate
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EPC2015 datasheet linkTRANS GAN 40V 33A BUMPED DIEEPC2015TRANS GAN 40V 33A BUMPED DIEActiveGaNFET N-Channel, Gallium Nitride260 - Immediate
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EPC2001 datasheet linkTRANS GAN 100V 25A BUMPED DIEEPC2001TRANS GAN 100V 25A BUMPED DIEActiveGaNFET N-Channel, Gallium Nitride296 - Immediate
EPC2001 product page link
EPC2010 datasheet linkTRANS GAN 200V 12A BUMPED DIEEPC2010TRANS GAN 200V 12A BUMPED DIEDiscontinuedGaNFET N-Channel, Gallium Nitride496 - Immediate
EPC2010 product page link
EPC2014 datasheet linkTRANS GAN 40V 10A BUMPED DIEEPC2014TRANS GAN 40V 10A BUMPED DIEActiveGaNFET N-Channel, Gallium Nitride316 - Immediate
EPC2014 product page link
PTM Published on: 2012-04-26