Paralleling eGaN FETs

Paralleling eGaN® FETs

EPC

This presentation will detail the work EPC has done to make it as easy as possible to use eGaN FETs in power conversion applications where more than one device working in parallel is needed to meet the output power requirements. These challenges will be presented and recommendations made to ensure the best performance from a paralleled switch converter. The discussion will focus on a single gate driver per switch and the half bridge topology.
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Related Parts
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EPC2010TRANS GAN 200V 12A BUMPED DIEGaNFET N-Channel, Gallium NitrideLogic Level Gate9211 -
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PTM Published on: 2012-04-26