eGaN® FET Reliability


This presentation will discuss the reliability of commercially available enhancement mode gallium nitride transistors from EPC. To explain the devices’ reliability, this presentation will review how they operate and highlight both their similarities and differences versus today’s power MOSFETs. Additionally, this presentation will describe the reliability tests that were performed and the results achieved for EPC’s first-generation eGaN FETs.

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Related Parts

ImageManufacturer Part NumberDescriptionPart StatusFET TypeAvailable Quantity
EPC2015 datasheet linkTRANS GAN 40V 33A BUMPED DIEEPC2015TRANS GAN 40V 33A BUMPED DIEActiveGaNFET N-Channel, Gallium Nitride260 - Immediate
EPC2015 product page link
EPC2001 datasheet linkTRANS GAN 100V 25A BUMPED DIEEPC2001TRANS GAN 100V 25A BUMPED DIEActiveGaNFET N-Channel, Gallium Nitride296 - Immediate
EPC2001 product page link
PTM Published on: 2011-04-06
PTM Updated on: 2016-03-30