eGaN® FET Reliability


This presentation will discuss the reliability of commercially available enhancement mode gallium nitride transistors from EPC. To explain the devices’ reliability, this presentation will review how they operate and highlight both their similarities and differences versus today’s power MOSFETs. Additionally, this presentation will describe the reliability tests that were performed and the results achieved for EPC’s first-generation eGaN FETs.

View Training Module

Related Parts

ImageManufacturer Part NumberDescriptionFET TypeFET FeatureAvailable Quantity
EPC2001C datasheet linkTRANS GAN 100V 36A BUMPED DIEEPC2001CTRANS GAN 100V 36A BUMPED DIEGaNFET N-Channel, Gallium NitrideStandard0EPC2001C product page link
PTM Published on: 2011-04-06
PTM Updated on: 2016-03-30