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eGaN® FET Reliability

EPC

This presentation will discuss the reliability of commercially available enhancement mode gallium nitride transistors from EPC. Large populations of eGaN FETs were tested from multiple device lots in a wide variety of high-stress conditions. These products were designed to be produced in high volume at low cost using standard silicon manufacturing technology and facilities. Thirty years of silicon power-MOSFET development taught us that one of the key variables controlling the adoption rate of a disruptive technology is whether or not the product is reliable enough to use in the application. This principle has guided the design of EPC’s eGaN FETs . To explain the devices’ reliability, this presentation will review how they operate and highlight both their similarities and differences versus today’s power MOSFETs. Additionally, this presentation will describe the reliability tests that were performed and the results achieved for EPC’s first-generation eGaN FETs.


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TRANS GAN 100V 25A BUMPED DIEEPC2001TRANS GAN 100V 25A BUMPED DIEGaNFET N-Channel, Gallium NitrideLogic Level Gate23088 - Immediate
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PTM Published on: 2011-04-06
PTM Updated on: 2015-01-28