Vishay's high-voltage power MOSFETs combine low on-resistance and gate charge

Image of Vishay/Siliconix's SiHP18N50C/SiHG20N50C MOSFETsVishay's SiHP18N50C and SiHG20N50C N-channel power MOSFETs combine a 500 V rating with low 0.270 Ω maximum on-resistance at a 10 V gate drive. This low RDS(on) translates into lower conduction losses that save energy in power factor correction (PFC) and pulse width modulation (PWM) applications in a wide range of electronic systems, including LCD TVs, PCs, servers, telecom systems, and welding machines.


  • Low figure of merit
  • 100% avalanche tested
  • High peak current capability
  • dV/dt ruggedness

  • Improved gate charge
  • High power dissipations capability
  • Improved trr/Qrr
  • RDS(on): 270 mΩ @ 10 A, 10 V
  • VGS: ±30 V
  • Id: 18 A (SiHP), 20 A (SiHG)
  • Maximum power: 223 W (SiHP), 292 W (SiHG)
  • Voltage: 500 V
  • Qg: 76nC @ 10 V
  • Ciss: 2942pF @ 25 V
  • Mounting type: through hole


ImageManufacturer Part NumberDescriptionFET TypeFET FeatureAvailable Quantity
SIHP18N50C-E3 datasheet linkMOSFET N-CH 500V 18A TO220SIHP18N50C-E3MOSFET N-CH 500V 18A TO220MOSFET N-Channel, Metal OxideStandard840 - Immediate
SIHP18N50C-E3 product page link


ImageManufacturer Part NumberDescriptionFET TypeFET FeatureAvailable Quantity
SIHG20N50C-E3 datasheet linkMOSFET N-CH 500V 20A TO247SIHG20N50C-E3MOSFET N-CH 500V 20A TO247MOSFET N-Channel, Metal OxideStandard4965 - Immediate
SIHG20N50C-E3 product page link
Published: 2010-03-29