SiA436DJ 8 V N-Channel TrenchFET Power MOSFET

Vishay Siliconix introduces a new 8 V, N-channel MOSFET with the industry’s lowest on-resistance in the 2 mm x 2 mm footprint area

Image of Vishay/Siliconix's SiA436DJ TrenchFET Power MOSFETVishay Siliconix's SiA436DJ 8 V, N-channel TrenchFET power MOSFET is designed to save valuable PCB space in portable electronics. For these devices, the MOSFET’s on-resistance values are 18% lower than previous generation solutions, and up to 64% lower than the closest competing N-channel device in the 2 mm x 2 mm footprint area. This ultra-low on-resistance translates into lower conduction losses for reduced power consumption, in addition to a lower voltage drop across the load switch to prevent unwanted under-voltage lockout. The SiA436DJ’s on-resistance ratings down to 1.2 V simplify circuit design by allowing the MOSFET to work with the low-voltage power rails common in handheld devices, providing longer battery operation between charges.

Features
  • Compact PowerPAK SC-70 package with 2 mm x 2 mm footprint area
  • Saves PCB space in portable electronics
  • Lowers conduction losses for reduced power consumption and higher efficiency
  • Prevents unwanted under-voltage lockout
  • On-resistance ratings down to 1.2 V allow the MOSFET to work with the low-voltage power rails common in handheld devices
Applications
  • Load switching in portable electronics such as smart phones and tablet PCs, in addition to mobile computing applications

SiA436DJ TrenchFET Power MOSFET

ImageManufacturer Part NumberDescriptionAvailable Quantity
SIA436DJ-T1-GE3 datasheet linkMOSFET N-CH 8V 12A SC70-6LSIA436DJ-T1-GE3MOSFET N-CH 8V 12A SC70-6L2580 - Immediate
SIA436DJ-T1-GE3 product page link
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Published: 2013-07-02